| Allicdata Part #: | IXTT50P085-ND |
| Manufacturer Part#: |
IXTT50P085 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 85V 50A TO-268 |
| More Detail: | P-Channel 85V 50A (Tc) 300W (Tc) Surface Mount TO-... |
| DataSheet: |  IXTT50P085 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 85V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 300W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-268 |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Description
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The IXTT50P085 is a single N-Channel MOSFET transistor manufactured by IXYS Corporation. It is a power MOSFET that is capable of carrying current up to a maximum of 85 Amps at temperatures up to 175°C and can operate at a maximum voltage of 40V. It is a high-performance, low-gate charge MOSFET, so it is suitable for applications where high levels of power and efficiency are required.The main application areas of the IXTT50P085 are power conversion and distribution, power switching, high-speed switching, motor control, and high-resistance switching. These applications require a reliable and efficient transistor, with low on-resistance and fast switching times. This is where the IXTT50P085 excels, as it has high power dissipation, low drain-source on-resistance, and low gate charge. The IXTT50P085 is ideal for switching applications, such as alarm system circuit control, power management, and voltage regulation.The working principle of the IXTT50P085 is based on the principle of field-effect transistors, or FETs. FETs are three-terminal devices that rely on a gate terminal to control the flow of current between two other terminals, the source and drain. When a certain voltage is applied to the gate, it creates an electric field in the channel that separates the source and drain. This electric field then acts on the electron-density of the channel, allowing or blocking current flow between the source and drain terminals.In the case of the IXTT50P085, when a voltage is applied to the gate terminal, the electrical field between the source and drain is intensified, thus allowing a higher current to flow through the transistor. This increase in electric field is then used to modulate the drain-source resistance, providing increased performance.The IXTT50P085 is an ideal choice for a variety of applications that require efficient and reliable switching devices. Its low on-resistance and high power dissipation make it an ideal choice for power conversion and distribution, power switching, high-speed switching, motor control, and high-resistance switching. Its working principle, based on FET transistors, also makes it suitable for applications such as alarm system circuit control, power management, and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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