IXTT16P60P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTT16P60P MOSFET is a single N-channel power MOSFET, manufactured by Infineon Technologies, released on October 4th 2017. This component has been designed equip with a low on-resistance feature, and is suitable for high-speed switching applications. With ultra-low gate and reverse transfer capacitance, the IXTT16P60P can handle high switching frequencies, and is commonly used in power conversion and motor control applications.

A power MOSFET, such as the IXTT16P60P, features a voltage amplification capability and excellent thermal resistance, making them ideal for switched-mode power supply (SMPS) and other applications that require a high level of efficiency. With their intrinsic body diode, these components are able to switch DC loads and act as free-wheeling diodes. Additionally, these devices feature an integrated ESD protection, making them safe to use in sensitive systems, even when exposed to high levels of electrostatic discharge.

The IXTT16P60P component is composed of a MOSFET n-channel and a GaN (Gallium nitride) trench technology - which allows for ultra low on-resistance. Its on-resistance is rated up to 1.5mOhms @ 10V, which allows the component to exhibit excellent conduction performance, and lower power dissipation than components featuring higher on-resistance. The component also features an integrated ESD protection, which is rated up to 4kV. This makes the component DV/DT immune, and can be used in stringent environments with more reliability than components featuring discrete ESD protection.

The IXTT16P60P works on the principle of a MOSFET - metal-oxide-semiconductor field-effect transistor device. A MOSFET is a voltage-controlled transistor which consists of a metal gate, a semi-conducting oxides and a semiconductor channel. The gate of a MOSFET acts as an electronic switch, where positive voltage acts as an on/off switch for the device. When a voltage is applied to the gate, it produces an electric field which causes the current to flow through the device when the switch is on. This means that even low voltage applications can be managed and switched on or off, depending on your desired control.

The applicability of the IXTT16P60P component is vast, with potential to be used in a wide range of applications, such as power factor correction, LED lighting, motor control, high-speed switching and many more.The component is suitable for high-frequency, high-demand applications and is capable of handling up to 80A of DC current, which could be increased with appropriate heatsinking, making it suitable for many power conversion applications that require high performance, efficiency and reliability.

The IXTT16P60P is an excellent component for various power applications, equipped with low on-resistance and ultra-low gate and reverse transfer capacitance, and an integrated ESD protection, making it suitable for various high frequency and high demand applications, where precise power control and efficient power conversion is needed.

The specific data is subject to PDF, and the above content is for reference