| Allicdata Part #: | IXTT140N10P-ND |
| Manufacturer Part#: |
IXTT140N10P |
| Price: | $ 5.89 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 100V 140A TO-268 |
| More Detail: | N-Channel 100V 140A (Tc) 600W (Tc) Surface Mount T... |
| DataSheet: |  IXTT140N10P Datasheet/PDF |
| Quantity: | 3 |
| 1 +: | $ 5.36130 |
| 30 +: | $ 4.39635 |
| 120 +: | $ 3.96738 |
| 510 +: | $ 3.32401 |
| 1020 +: | $ 2.89510 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 600W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 155nC @ 10V |
| Series: | PolarHT™ |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 70A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V, 15V |
| Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT140N10P is a N-Channel Insulated Gate Bipolar Transistor (IGBT) in the IGBT family of power devices. It is an integrated switching device formed by combining a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with an IGBT in the same package. It is able to switch very quickly and handle high power, making it useful in various applications such as motor control, power supplies, and switching regulators.
The IXTT140N10P has a maximum voltage rating of 450V, a maximum current rating of 125A and a dielectric strength of 1250Voltage(DC). The device offers a low turn-off switching loss, low reverse recovery current, and a high switching speed. It is used in various power applications, including motor controllers, solar inverters, and switching power supply.
Application Field
The IXTT140N10P is used in several different applications, including motor control, switching power supplies, AC/DC converters, solar inverters and UPS systems. It provides reliable operation at high temperature, high reliability and low switching losses.
The IXTT140N10P is suitable for high-power switching applications in low voltage, logic-level applications such as motor control, microwave radiation, UPS systems and power generation applications. For example, the IXTT140N10P is ideal for motor control applications due to its low forward voltage drop, low noise performance and fast switching speed. In addition, it has a wide operating temperature range and can work in harsh conditions.
Working Principle
The IXTT140N10P works by using two transistors to control the flow of current. One of these transistors is the Metal-Oxide-Semiconductor Field-Effect Transistor, or MOSFET. This transistor is connected to the source of the power source, allowing the current to flow when the gate is appropriately charged. The other transistor is the Insulated Gate Bipolar Transistor, or IGBT. This transistor is connected between the drain and the source, allowing the current to be switched ‘on’ and ‘off’ when the gate voltage is adjusted.
When the IXTT140N10P is activated, the MOSFET is used to create an impedance, which increases the resistance in the current. This resistance prevents the current from flowing through the device. At the same time, the IGBT is used to create a voltage spike as the voltage and current is ‘locked’. As the voltage rises and falls, the current is forced to flow through the IXTT140N10P and the device is activated.
The IXTT140N10P is the perfect device for high power switching applications, due to its low turn-off switching loss, low reverse recovery current, and high switching speed. It is reliable and able to switch very quickly, making it ideal for motor control, power supplies, and switching regulators.
The specific data is subject to PDF, and the above content is for reference
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