Allicdata Part #: | IXTT2N170D2-ND |
Manufacturer Part#: |
IXTT2N170D2 |
Price: | $ 15.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1700V 2A TO-268 |
More Detail: | N-Channel 1700V 2A (Tj) 568W (Tc) Surface Mount TO... |
DataSheet: | IXTT2N170D2 Datasheet/PDF |
Quantity: | 597 |
1 +: | $ 13.82220 |
10 +: | $ 12.56280 |
100 +: | $ 10.67840 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1700V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | 6.5 Ohm @ 1A, 0V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3650pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 568W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT2N170D2 is a transistor developed to meet the needs of an increasingly wide range of applications that require reliable and robust performance based on their different working principles. This transistor is related to the family of FETs, MOSFETs– Single in the market.
The IXTT2N170D2 is capable of well operation under high temperature and pressure environments. In order for them to work, a source and drain junction is present in the structure. They also need a control terminal that is connected to the gate. This device shares the same n-channel enhancement mode characteristics as other MOSFETs, making them suitable for surface-mount assembly.
When an electric signal is applies at the control terminal (gate), the current-carrying capacity of the device (drain current) is controlled by the magnitude of that signal. The IXTT2N170D2 is a logic-level device with an on-state drain current of up to 2.5A in a typical operating temperature range of -40°C to +125°C. It features a drain-to-source breakdown voltage rating of 170V and a low gate-to-source threshold voltage of ±2.0V.
One of the most common applications of this device is as a switch in power electronics. It can be used to manipulate electrical current flowing between two different parts of a circuit. For example, it can be used to regulate the amount of current flowing to a motor, or to control the switching of components in a power converter. It can also be used as an over-current protection device, and it was designed to operate at high switching speed and low drain-source resistance. This makes the device suitable for usage in high-speed switching circuits.
The IXTT2N170D2 can also be used to control a wide range of logic circuits and electrical systems. Its low on-state drain current and gate-source threshold voltage make it suitable for applications requiring low power input, such as low voltage or low current switch control circuits. Other applications include high frequency switching and embedded microcontroller-based systems.
The IXTT2N170D2 is an advanced, reliable, and robust device designed to meet the needs of a variety of applications. It presents a combination of excellent power and thermal characteristics that has made it one of the most popular transistors in the market.
The specific data is subject to PDF, and the above content is for reference
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