Allicdata Part #: | IXTT90P10P-ND |
Manufacturer Part#: |
IXTT90P10P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 100V 90A TO-268 |
More Detail: | P-Channel 100V 90A (Tc) 462W (Tc) Surface Mount TO... |
DataSheet: | IXTT90P10P Datasheet/PDF |
Quantity: | 1000 |
Series: | PolarP™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 462W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT90P10P is a logic level enhancement-mode insulated-gate field-effect transistor (IGFET). It is usually used for switching applications and the best part about this is that it has no gate current. It is one of the best power FETs in its class and this is what makes IXTT90P10P application field work so great for a wide range of applications.
The IXTT90P10P is a single-channel N-channel MOSFET with a source-drain voltage (VDSS) of 90V (maximum). It is designed for high-voltage, high-frequency switching applications, as it has a low on-resistance. This makes it perfect for use in high-current applications such as motor control and lighting applications.
In terms of its working principle, the IXTT90P10P is based on the principle of insulated-gate field-effect transistors (IGFETs). This essentially means that the gate voltage of this MOSFET depends on the voltage applied to the gate-source. When a positive voltage is applied to the gate-source, the gate-source junction is reversed biased, and so the drain-source current decreases. As the voltage across the drain-source terminals increase, the drain-source current increases, leading to an increase in the drain-source voltage.
The IXTT90P10P can also be used for voltage-controlled switching. This makes it useful for applications such as pulse-width modulation and analog-to-digital converters. In terms of its application field, the IXTT90P10P is used in a variety of different applications such as motor control, automotive electronics, industrial power supplies, computer systems and more.
Overall, the IXTT90P10P is a type of single-channel N-channel MOSFET with a source-drain voltage of 90V (maximum). It is designed for high-voltage, high-frequency switching applications, as it has a low on-resistance. This makes it perfect for use in high-current applications such as motor control and lighting applications. In terms of its working principle, the IXTT90P10P is based on the principle of insulated-gate field-effect transistors (IGFETs). And its application field is widely used in different applications such as motor control, automotive electronics, industrial power supplies, computer systems and more.
The specific data is subject to PDF, and the above content is for reference
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