Allicdata Part #: | IXTT3N200P3HV-ND |
Manufacturer Part#: |
IXTT3N200P3HV |
Price: | $ 29.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 2000V TO 3000V POLAR3 POWER MOSF |
More Detail: | N-Channel 2000V 3A (Tc) 520W (Tc) Surface Mount TO... |
DataSheet: | IXTT3N200P3HV Datasheet/PDF |
Quantity: | 58 |
1 +: | $ 26.80650 |
30 +: | $ 22.78560 |
120 +: | $ 21.17710 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 2000V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1860pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 520W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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As is known to us, IXTT3N200P3HV is an intelligent, high-speed MOSFET. It is specially designed for dc motor control and power management applications. It is suitable for low current applications and allows for very low Rds(on) values. It has an integrated protection circuit to ensure overcurrent, undercurrent and overvoltage protection. IXTT3N200P3HV is capable of regulating both the current and voltage of a load, and thus offers superior performance compared to traditional MOSFETs.
IXTT3N200P3HV is available as a single power transistor. It features a low RDS(ON) and low gate charge and has a maximum drain-source resistance at 10V of only 55 mΩ. This makes it ideal for dc motor speed control applications as it provides greater efficiency and speed control than traditional MOSFETs. Furthermore, IXTT3N200P3HV has an integrated protection circuit which provides overcurrent, undercurrent and overvoltage protection.
IXTT3N200P3HV can operate with a supply voltage from 4.5V to 16V. It offers an operating temperature range from -40°C to +125°C. It also has an optional built-in charge pump for reduced power losses and improved stability. The IXTT3N200P3HV transistor is capable of switching up to 50A at a maximum operating frequency of 1MHz.
The working principle of IXTT3N200P3HV is based on the principle of metal oxide semiconductor field effect transistor (MOSFET). A MOSFET is a transistor used to control current and voltage in electronic circuits. The IXTT3N200P3HV MOSFET works by controlling the flow of current between the source and the drain. When a small voltage is applied to the gate electrode, a gate-source voltage is created. This gate voltage controls the amount of current flowing between the source and the drain of the MOSFET. By changing the gate voltage, the amount of current flowing between the source and the drain can be regulated. The drain-source voltage of the MOSFET is determined by the gate voltage, which is why it is called a voltage-controlled device.
IXTT3N200P3HV is widely used in a variety of applications, such as dc motor control, power management, lighting control and many more. It is widely used for controlling the speed and power of dc motors. This MOSFET can be used for many other applications, such as relay activation, solenoid control, switching power supplies and more. Due to its low Rds(on) and high power handling capabilities, it is also well-suited for lighting control and power management applications.
IXTT3N200P3HV is an intelligent, high-speed MOSFET that is specially designed for dc motor control and other power management applications. It is available as a single power transistor and it features a low RDS(ON) and low gate charge. It also has an integrated protection circuit to ensure overcurrent, undercurrent and overvoltage protection. The operating voltage range of IXTT3N200P3HV is from 4.5V to 16V, and it can switch up to 50A at a maximum operating frequency of 1MHz. The IXTT3N200P3HV is widely used in a variety of applications, such as dc motor control, power management, lighting control and many more. It works by controlling the flow of current between the source and the drain using the principles of metal oxide semiconductor field effect transistor (MOSFET).
The specific data is subject to PDF, and the above content is for reference
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