IXTT96N15P Allicdata Electronics
Allicdata Part #:

IXTT96N15P-ND

Manufacturer Part#:

IXTT96N15P

Price: $ 4.10
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 150V 96A TO-268
More Detail: N-Channel 150V 96A (Tc) 480W (Tc) Surface Mount TO...
DataSheet: IXTT96N15P datasheetIXTT96N15P Datasheet/PDF
Quantity: 1000
30 +: $ 3.68403
Stock 1000Can Ship Immediately
$ 4.1
Specifications
Series: PolarHT™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
FET Feature: --
Power Dissipation (Max): 480W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-268
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Description

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The IXTT96N15P is an N-channel enhancement mode MOSFET made by IXYS Corporation. It is a thermally and electrically robust device, allowing it to be used in a range of applications. This article will discuss the application field and working principles of the IXTT96N15P.

The most common application for the IXTT96N15P is in switching applications. It is especially popular for load switching applications in automotive, industrial and consumer applications. In these applications, the MOSFET is used to control the flow of power to the load, allowing for efficient power management. The IXTT96N15P is also used in other applications such as motor control and power conversion.

The IXTT96N15P operates as an enhancement type MOSFET, meaning it does not require a gate-source voltage to operate. In this mode of operation, the drain current is turned off when the gate-source voltage is zero and turned on when it rises above a certain threshold voltage. This threshold voltage is typically around 4V. Once the gate-source voltage rises above this threshold, current begins to flow through the channel and the MOSFET is considered to be in the “on” state.

To switch off the IXTT96N15P, the gate-source voltage must be pulled below the threshold voltage. This causes the current to immediately cease flowing and the MOSFET is now in the “off” state. The reverse current flow can also affect the IXTT96N15P, so it is important to ensure that the gate-source voltage does not become too high when the MOSFET is in the on state, otherwise it could be damaged.

The IXTT96N15P has a power dissipation rating of 14 Watts, making it suitable for various power switching applications. It has a drain-source voltage rating of 600V, allowing it to handle high voltages. Additionally, the IXTT96N15P has an on-resistance rating of 0.14 Ohms and a maximum gate-source voltage rating of 15V, allowing it to switch quickly and efficiently.

The IXTT96N15P is a proven device in power switching applications. Its high power handling capability, low on-resistance, and robust design make it an ideal choice for a variety of applications. By understanding its application field and working principles, users of the IXTT96N15P can be assured of its reliability and performance.

The specific data is subject to PDF, and the above content is for reference

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