Name: IXTT140P10T
Brand: IXYS
SKU: IXTT140P10T-ND
Price: 9.29 USD
Availability: InStock

Allicdata Part #:	IXTT140P10T-ND
Manufacturer Part#:	IXTT140P10T
Price:	$ 9.29
Product Category:	Discrete Semiconductor Products
Manufacturer:	IXYS
Short Description:	MOSFET P-CH 100V 140A TO-268
More Detail:	P-Channel 100V 140A (Tc) 568W (Tc) Surface Mount T...
DataSheet:	IXTT140P10T Datasheet/PDF
Quantity:	1000

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Specifications

Series:	TrenchP™
Packaging:	Tube
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	12 mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	400nC @ 10V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	31400pF @ 25V
FET Feature:	--
Power Dissipation (Max):	568W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-268
Package / Case:	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Description

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IXTT140P10T is a N-Channel MOSFET with a breakdown voltage rating of 140V and a max drain current of 10A. It is mainly used in high side and low side switches in power management applications, such as motor control, LED lighting, power converters, automotive, and electronic load control. It is also used in all types of power switches in industrial, medical, and consumer applications. Its unique features make it particularly suitable for switching high current and high voltage applications. The IXTT140P10T MOSFET uses a JFET-like structure, where a vertical N-channel is formed between the source and the drain. This structure is designed to reduce the on-resistance and improve the reliability in high current applications. The operation of the device is based on the principle of majority carriers, which is when a current flows through the MOSFET, the concentrations of majority carriers (electrons) increase. This increase in majority carriers causes an increase in the resistance of the device, resulting in greater voltage drop across the source-drain junction. When an external gate voltage is applied to the IXTT140P10T, electrons are attracted to the gate and further increase the concentration of majority carriers in the channel. This causes an increase in gate-drain current and leads to an increase in the gate-drain voltage drop. This gate voltage drop is used to control the current in the MOSFET, making it an efficient and reliable switch. The IXTT140P10T is also designed to be resistant to the adverse effects of parasitic capacitance and to minimize power loss across the device. In terms of its applications, the IXTT140P10T is ideal for high current applications, such as motors and lighting, due to its low on-resistance and high current rating. The device is also suitable for electronic load control, such as LED backlighting, due to its capability of switching large amounts of current without generating a large voltage drop. Furthermore, it is suitable for power switches used in consumer and industrial applications, such as power converters, power solutions, and power distribution. In summary, the IXTT140P10T is a N-Channel MOSFET with a high breakdown voltage and high drain current rating. It is suitable for use in high side and low side switches in power management applications, such as motor control, LED lighting, and electronic load control. Its unique features make it ideal for switching high current and high voltage applications. Lastly, the device is resistant to the adverse effects of parasitic capacitance, making it an efficient and reliable switch.

The specific data is subject to PDF, and the above content is for reference

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IXTT140P10T-ND

IXTT140P10T

Discrete Semiconductor Products