Allicdata Part #: | IXTT12N140-ND |
Manufacturer Part#: |
IXTT12N140 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1400V 12A TO268 |
More Detail: | N-Channel 1400V 12A (Tc) 890W (Tc) Surface Mount T... |
DataSheet: | IXTT12N140 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1400V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 106nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3720pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 890W (Tc) |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT12N140 FET is a power field-effect transistor (FET) with a single NMOS technology frequently used in a wide range of applications.
The IXTT12N140 is a high-voltage FET suitable for applications such as motor controls, actuators, LED lighting, robotics, power supplies, and other industrial equipment. It provides excellent output power with low on-resistance at a higher voltage operation than conventional FETs and MOSFETs.
Characteristics
The IXTT12N140 has a typical breakdown voltage of 1000V and a maximum drain source voltage of 600V. It\'s drain current is rated at 12A and features a low gate threshold voltage, which allows for operation at a lower voltage than a standard MOSFET. Additionally, the IXTT12N140 provides ESD robustness and can take up to 2000 volts of electrostatic discharge (ESD) without breaking. It also has good thermal resistance, meaning that it can withstand high temperatures with minimal heat dissipation.
Working principle
The IXTT12N140 is a single NMOS transistor. NMOS stands for n-type metal oxide semiconductor, which is a type of power semiconductor. An NMOS transistor works by controlling the flow of current between source and drain by using an electric field to create a conductive channel between them. When an appropriate voltage is applied to the gate of the transistor, the electric field increases, creating an inversion layer or conductive channel in the silicon of the transistor. This allows for a controlled current flow between the source and drain.
The IXTT12N140 is designed to have a high breakdown voltage and low on-resistance meaning that it can be used to control higher voltages with minimal power loss. Additionally, the IXTT12N140 has a lower gate threshold voltage, meaning that it can be operated at a lower voltage than standard MOSFETs.
Applications
The IXTT12N140 can be used in a variety of power management, motor control, and industrial applications. It is perfect for applications requiring high-voltage handling, such as LED lighting, robotics, power supplies, and other industrial equipment.
The IXTT12N140 can also be used in switching mode power supplies (SMPS), as it can handle higher voltages and has a lower gate threshold voltage than other FETs and MOSFETs. Additionally, the IXTT12N140’s low on-resistance makes it a great choice for low-power applications.
The IXTT12N140 is also capable of handling higher switching frequencies than other FETs and MOSFETs, making it a great choice for applications such as motor control and robotics.
Conclusion
The IXTT12N140 is a power FET with a single NMOS technology that is ideal for high-voltage applications such as LED lighting, robotics, power supplies, and other industrial equipment. It has a high breakdown voltage, low on-resistance, and a lower gate threshold voltage than conventional FETs and MOSFETs. Additionally, the IXTT12N140 is capable of handling higher switching frequencies, making it a great choice for motor control and robotics applications.
The specific data is subject to PDF, and the above content is for reference
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