Allicdata Part #: | IXTT75N10-ND |
Manufacturer Part#: |
IXTT75N10 |
Price: | $ 19.75 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 75A TO-268 |
More Detail: | N-Channel 100V 75A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXTT75N10 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 17.95750 |
Series: | MegaMOS™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 37.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 260nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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An IXTT75N10 is a type of high-voltage Field Effect Transistor (FET) which is used in power switching applications. It is a single MOSFET designed to work with a wide range of input voltages and is optimized for use with low gate thresholds. This makes it well-suited for use in high-power applications, such as those found in motor control and automotive applications. In this article, we’ll take a look at the IXTT75N10’s application field and working principle.
IXTT75N10 Application Field
The IXTT75N10 is a S-band single MOSFET that is suitable for use in high-power applications. It is optimized for use with a low gate threshold and a wide range of input voltages, making it an ideal choice for motor control, power converters and power switching applications. This makes it a good fit for automotive systems, as well as for industrial and consumer applications where high-power switching is needed.
In addition to these applications, the IXTT75N10 is also suitable for use in a number of other high-power applications, such as synchronous rectification, protection circuits, load switching, and load current control.
IXTT75N10 Working Principle
The IXTT75N10 is a single MOSFET that is optimized for use with low-gate thresholds and a wide range of input voltages. It works by controlling the voltage between the drain and source terminals of the FET. In order to make this happen, a gate terminal is needed that controls the voltage between the drain and source. This voltage is referred to as the "gate voltage".
The gate voltage is the most important aspect of the IXTT75N10’s functioning. When the gate voltage is increased, the transistor is turned on, allowing current to flow between the drain and source. This current is referred to as the channel current. When the gate voltage is decreased, the channel current is reduced and the transistor is turned off.
The IXTT75N10 also uses a heuristic approach for determining the optimum gate voltage for a given application. The device does this by monitoring the current flowing in the channel when the gate voltage is varied and comparing the results against pre-defined boundaries. This process is known as adaptive gate voltage control and it allows the IXTT75N10 to optimize its performance for different operating conditions.
The IXTT75N10 is an excellent choice for use in a wide range of high-power applications that require high voltage and current levels. Its ability to accurately adjust its gate voltage to an optimum level helps ensure reliable and consistent performance under a variety of conditions. This makes it an excellent choice for users who need reliable and efficient power switching.
The specific data is subject to PDF, and the above content is for reference
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