| Allicdata Part #: | IXTT48P20P-ND |
| Manufacturer Part#: |
IXTT48P20P |
| Price: | $ 7.97 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET P-CH 200V 48A TO-268 |
| More Detail: | P-Channel 200V 48A (Tc) 462W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT48P20P Datasheet/PDF |
| Quantity: | 260 |
| 1 +: | $ 7.24500 |
| 30 +: | $ 5.94090 |
| 120 +: | $ 5.36130 |
| 510 +: | $ 4.49190 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 462W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 103nC @ 10V |
| Series: | PolarP™ |
| Rds On (Max) @ Id, Vgs: | 85 mOhm @ 24A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 48A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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Integrated, nonvolatile ferroelectric transistor technology, or IXTT48P20P, is a miniature FET technology developed for ultra-low voltage applications, applications that require a low power dissipation and can stand up to shock and vibration disturbances. IXTT48P20P technology is based on ferroelectric materials, which are materials that respond to an electric field. A ferroelectric material can take one of two states at a stable temperature, such as positive and negative, which can be used to store digital information.
The main application areas of IXTT48P20P technology are data sensing and memory. In data sensing applications, an IXTT48P20P FET can be used as a sensor device to detect an electric, magnetic, or pressure-induced signal. Examples of application areas include medical monitoring systems, automation systems, industrial process controls, electrical power systems, nuclear plants, and fire alarm systems. In the memory application, an IXTT48P20P FET can be used as a nonvolatile memory cell.
The working principle of the IXTT48P20P FET is based on the properties of ferroelectric material, which is described above. The IXTT48P20P FET has two gates, one for controlling the current flow, and one for controlling the polarization of the ferroelectric material. When a voltage is applied to the gate controlling the current flow, it will cause a current to pass through the source and drain. When a voltage is applied to the polarization gate, it will cause the polarization of the ferroelectric material to change, and this change can be used to store binary information.
The IXTT48P20P FET is capable of providing high-precision sensing and data storage performance with low power dissipation. It also has a high breakdown voltage and can withstand shock and vibration. The IXTT48P20P FET is the best choice for applications that require low voltage, low power dissipation, high accuracy, and high reliability.
The specific data is subject to PDF, and the above content is for reference
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