| Allicdata Part #: | IXTT16N20D2-ND |
| Manufacturer Part#: |
IXTT16N20D2 |
| Price: | $ 7.57 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 200V 16A TO-268 |
| More Detail: | N-Channel 200V 16A (Tc) 695W (Tc) Surface Mount TO... |
| DataSheet: |  IXTT16N20D2 Datasheet/PDF |
| Quantity: | 1361 |
| 1 +: | $ 6.87960 |
| 10 +: | $ 6.19164 |
| 25 +: | $ 5.64127 |
| 100 +: | $ 5.09090 |
| 250 +: | $ 4.67813 |
| 500 +: | $ 4.26535 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | TO-268 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 695W (Tc) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 5500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 208nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 73 mOhm @ 8A, 0V |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXTT16N20D2 is a type of insulated-gate bipolar transistor (IGBT) specifically designed for electric power switching applications. The device utilizes a insulated gate field effect transistor (MOSFET) and bipolar junction transistor (BJT) integrated into a single package. It is used in a variety of applications, including electric drives, lighting, welding, and electric furnace control. This article will discuss the application field and working principle of the IXTT16N20D2.
Applications of the IXTT16N20D2
The IXTT16N20D2 has a wide range of applications in the electric power switching area. It is used in the control and regulation of electric drives, lighting systems, welding equipment, and electric furnace regulation. It can also be found in high power switching applications such as power supplies, motor control and UPS systems. In addition, it can be used in a variety of other applications such as home appliances and electric vehicle controls. Due to its high efficiency and reliability, the IXTT16N20D2 is a popular choice for these applications.
Working Principle of the IXTT16N20D2
The IXTT16N20D2 works by combining a MOSFET and a BJT in a single package. The bipolar junction transistor (BJT) is connected to the insulated gate field effect transistor (MOSFET) via a diode. When the MOSFET is turned on, it provides a low-impedance path between the source and the drain, allowing current to flow. The BJT is used to control the voltage across the MOSFET by adjusting the voltage of the gate resulting in a larger current.
At the same time, the BJT also provides excellent switching speed, which is an ideal feature for power switching applications. Furthermore, the IXTT16N20D2 has been designed to minimize EMI (electromagnetic interference) and reduce system cost. This makes it an ideal solution for applications where low-cost, efficient, and reliable operation is desired.
Conclusion
The IXTT16N20D2 is an insulated-gate bipolar transistor specifically designed for electric power switching applications. It combines a MOSFET and a BJT in a single package and can be used in a variety of applications, such as electric drives, lighting, welding, and electric furnace control. Additionally, the IXTT16N20D2 features excellent switching speed, low electromagnetic interference and low-cost operation. All in all, the IXTT16N20D2 is a great choice for electric power switching applications.
The specific data is subject to PDF, and the above content is for reference
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