Allicdata Part #: | IXTT16N10D2-ND |
Manufacturer Part#: |
IXTT16N10D2 |
Price: | $ 7.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 16A TO-268 |
More Detail: | N-Channel 100V 16A (Tc) 830W (Tc) Surface Mount TO... |
DataSheet: | IXTT16N10D2 Datasheet/PDF |
Quantity: | 60 |
1 +: | $ 7.15050 |
10 +: | $ 6.43545 |
30 +: | $ 5.86341 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 0V |
Rds On (Max) @ Id, Vgs: | 64 mOhm @ 8A, 0V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 225nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5700pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 830W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT16N10D2 is a high-current, high-performance power MOS FET designed by Infineon Technologies for switching applications. It is a device that converts electrical signals into mechanical action, allowing for control of power to electronic devices.
This device includes many features, such as its low on-resistance, low reverse transfer capacitance and its total gate charge of 11 nC. It is typically used for applications such as DC-DC converters, AC-DC converters and power supplies that require high current switching.
The IXTT16N10D2 is a replacement for the previous IXTT16N10 device, but with an enhanced internal structure and improved layout that gives it superior performance. This has been made possible through the use of a thinner chip, improved heat sink elements and by replacing the silicon dioxide and silicon nitride layers with a new photoresist and spacer layer.
The IXTT16N10D2 is a high-performance device due to its low on-resistance and low reverse transfer capacitance. This makes it excellent for operating high current applications in power converters, inverters and other applications. Its total gate charge is 11 nC, which is the highest yet achieved in this power MOSFET family and is more than twice the charge of the previous device.
This device works on a principle called metal-oxide-semiconductor field-effect transistor (MOSFET) technology. This is a popular form of electronic component that relies on a gate electrode, which acts like a switch, to control current flow between two terminals when an external voltage is applied. This makes them ideal for controlling high power signals, such as those generated by a motor or an amplifier.
The IXTT16N10D2 is designed to be used in an application field that requires high current switching. As mentioned previously, it is suitable for DC-DC converters, AC-DC converters and power supplies. It is also suitable for use in audio, medical and automotive applications.
This device is also suitable for applications that require high-frequency operation, such as voltage converters, AC-DC converters, high-end amplifiers and sound systems. Additionally, it is suitable for applications that require more dynamic operation, such as motion controllers, servos and other sensors.
The IXTT16N10D2 is a versatile device with excellent performance for a variety of applications. Its low on-resistance, low reverse transfer capacitance and total gate charge make it especially suitable for operating high current applications in power converters, inverters and other applications. It is a reliable, robust and efficient device, making it the perfect choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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