Allicdata Part #: | IXTT1N450HV-ND |
Manufacturer Part#: |
IXTT1N450HV |
Price: | $ 29.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 4500V 1A TO268 |
More Detail: | N-Channel 4500V 1A (Tc) 520W (Tc) Surface Mount TO... |
DataSheet: | IXTT1N450HV Datasheet/PDF |
Quantity: | 227 |
1 +: | $ 26.80650 |
10 +: | $ 24.79620 |
100 +: | $ 21.17710 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 4500V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 85 Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: | 6.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1730pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 520W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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The IXTT1N450HV is a complementary transistors-FETs, MOSFETs-Single component that is produced by IXYS Corporation. It is a low capacitance epitaxial PNP transistor built on a silicon substrate with an integrated gate-source voltage blocking capability. It offers excellent switching performance and high-frequency operation, making it ideal for use in high-speed devices that require low power consumption. This component is also known for its wide operating temperature range, making it a suitable choice for diverse applications.
The IXTT1N450HV is designed with an ultra-low capacitance (0.55 pF typical) and features a collector-emitter breakdown voltage of 900 V. This component also has high junction temperature, up to 150°C. It utilizes advanced process technology that enables the IXTT1N450HV to offer exceptional low energy and low levels of distortion. The IXTT1N450HV is also characterized by its low on-state resistance, giving it excellent DC characteristics and fast switching times.
In terms of its working principle, the IXTT1N450HV utilizes a junction field-effect transistor (JFET) design. This type of device is basically composed of two junctions, where the source is connected to the channel and the drain is then biased. This allows the device to use a single gate voltage in order to control both the current and the voltage level in the device. By controlling the gate voltage, the device can be used to conduct or block current. The device is also known for its excellent dynamic performance, which makes it suitable for high-speed applications.
The IXTT1N450HV has a wide range of applications, from low-power logic circuits to high-speed analog-to-digital converters. It can also be used in power switching devices and motor control systems, for example, in power inverters. The IXTT1N450HV is also suitable for use in mobile phone base station systems, X-ray systems and other industrial equipment. In addition, because of its low lateny and low distortion characteristics, it is also used in audio equipment.
In conclusion, the IXTT1N450HV is a low capacitance, high frequency, low power consumption transistor that is suitable for various applications. It utilizes an advanced JFET design which allows it to offer excellent dynamic performance, making it a suitable choice for high-speed applications. The IXTT1N450HV is also characterized by its wide operating temperature range, making it suitable for diverse applications.
The specific data is subject to PDF, and the above content is for reference
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