Allicdata Part #: | IXTT1N300P3HV-ND |
Manufacturer Part#: |
IXTT1N300P3HV |
Price: | $ 23.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 2000V TO 3000V POLAR3 POWER MOSF |
More Detail: | N-Channel 3000V 1A (Tc) 195W (Tc) Surface Mount TO... |
DataSheet: | IXTT1N300P3HV Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 21.01050 |
30 +: | $ 17.85900 |
120 +: | $ 16.59830 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 3000V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 50 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 30.6nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 895pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 195W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-268 |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Description
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The IXTT1N300P3HV is a discrete component indicated as a JFET, a junction field effect transistor. It belongs to a very special type of transistors, namely a kind of FET, also known as field effect transistors. FETs, accompanied by the commonly used BJTs, are the two major transistor families.JFETs are especially advantageous in controlling the majority carriers and few minority carriers of voltage and current, compared to BJT-based components. They are extremely reliable and have a greater efficiency, making them a preferred choice for some applications. In addition, they have a low input capacitance, thus allowing for improved bandwidth and frequency response.This particular type of FET, IXTT1N300P3HV, has a breakdown voltage of 40V, an IDSS current of 3A, and a gate-source voltage of -4V. It also has a high input impedance, which results in an excellent signal-to-noise ratio, and an even lower power consumption.The IXTT1N300P3HV, being a JFET, works by creating a voltage drop between the gate and source terminals, causing a depletion region at the drain-source junction. This enables the current flow between the drain and source to be controlled by varying the gate voltage. If sufficient voltage is applied to the gate electrode, the depletion region expands and the current decreases. It is thus extremely suitable for use in applications requiring power regulating, such as motor control, remote switching, and audio and video amplification. It can also be used in power supply management and power supply circuits, and to control the speed and direction of motor rotation.Another common application of IXTT1N300P3HV is in logic circuits, thanks to its fast input switching speed and low input capacitance. Its low current drain and low noise makes it ideal for use in very low power systems that require low energy consumption.The IXTT1N300P3HV is also suitable for radio frequency signal conversion, especially applications in which the components must be small and require low-power consumption.The IXTT1N300P3HV is an excellent choice for a variety of applications, given its low power consumption, high input impedance, low current drain, and fast switching speed. It is highly reliable and efficient, making it an ideal option for remote power management, motor control, audio and video signal conversion, and logic circuits.
The specific data is subject to PDF, and the above content is for reference
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