Allicdata Part #: | IXTT10P60-ND |
Manufacturer Part#: |
IXTT10P60 |
Price: | $ 6.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET P-CH 600V 10A TO-268 |
More Detail: | P-Channel 600V 10A (Tc) 300W (Tc) Surface Mount TO... |
DataSheet: | IXTT10P60 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 5.86656 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | TO-268 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4700pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXTT10P60, also known as a “Vertical DMOS,” is a strong, single component that uses a metal–oxide–semiconductor field-effect-transistor (MOSFET) structure. It was developed to withstand the harsh conditions found in various applications, such as automotive, marine, and industrial equipment, where it is designed to operate in temperature and voltage extremes.
The IXTT10P60 provides exceptional performance when used on machines that require extreme temperature ranges, as it is designed to work with temperatures ranging from -65 degree Celsius to 175 degree Celsius. Additionally, it is capable of handling surges as high as 600 volts with a source/drain voltage of only 10 volts.
The device also has high levels of immunity from electrical and mechanical shock, including stored-charge and reverse-bias avalanche breakdown. Typically, these levels are unreachable by most single component transistors, making the IXTT10P60 the ideal component for the applications that require maximum performance.
The IXTT10P60 is designed with a vertical structure to create a stable, reliable operation. Unlike a “planar” or “twin-tub” MOSFET structure, the vertical structure provides greater insulation, thermal efficiency, and larger contact areas. This allows it to withstand the extreme temperatures and voltages found in automotive, marine, and industrial applications without sacrificing performance.
The IXTT10P60 operates using the principle of Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). MOSFET structures work by using a gate, source and drain connection which is used to control the current flow through the device. A voltage is applied between the gate and source, which creates an electric field between them. This field causes the current to either remain off or be turned on depending on the voltage applied to the gate. Thus, the IXTT10P60 can be used as either an amplifier or a switch, or both.
The IXTT10P60 has become a popular choice for applications that require a reliable and durable component with maximum performance. With its robust MOSFET technology, it has become the preferred choice for those needing extreme performance within extreme operating conditions. For applications in automotive, marine, and industrial equipment, the IXTT10P60 provides the best of both worlds, allowing engineers to design and develop devices that can last long and work hard in the most extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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