Allicdata Part #: | MMRF1018NR1-ND |
Manufacturer Part#: |
MMRF1018NR1 |
Price: | $ 41.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 120V 860MHZ |
More Detail: | RF Mosfet LDMOS 50V 350mA 860MHz 22dB 18W TO-270 W... |
DataSheet: | MMRF1018NR1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 38.14180 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 860MHz |
Gain: | 22dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 350mA |
Power - Output: | 18W |
Voltage - Rated: | 120V |
Package / Case: | TO-270-4 |
Supplier Device Package: | TO-270 WB-4 |
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The MMRF1018NR1 is a device in the family of Field-Effect Transistors (FETs) that are designed to work at high frequency ranges in radio frequency (RF) applications. This FET uses metal-oxide-semiconductor (MOS) technology and is designed to operate at frequencies up to 10 GHz. For high frequency signals, it is more advantageous to use a device such as the MMRF1018NR1 than a standard FET.
Applications of the MMRF1018NR1 include amplifying and controlling high frequency signals in a broad range of applications such as radios, satellite communication systems, computers, and medical imaging. This device is suitable for use in low noise amplifier (LNA) applications, passive mixers, transmitters, receivers, and power controllers.
The working principle of the MMRF1018NR1 is based on the operation of the capacitor, which is a passive component that stores charge on its plates and produces an electric field between them. The capacitor works by using a voltage or electric potential difference across its plates, which causes a charge to flow through it. The voltage across the capacitor can be manipulated by changing the capacitance, which is determined by the distance between the plates, the area of the plates, and the dielectric material between them.
The MMRF1018NR1 contains a number of transistors and capacitors, which all work together to create a high-frequency signal that can be used in various radio frequency applications. At the heart of the MMRF1018NR1 is a MOSFET. This device is essentially a field effect transistor that uses an insulated gate to control the conductivity of the semiconductor material between the source and the drain.
When a voltage is applied across the MOSFET, it changes the conductivity of the drain and allows the current to flow from the source to the drain. This current flow creates an electric field across the MOSFET that can be used to amplify or control the high frequency signal. To ensure optimal performance, the capacitance in the circuit must be tuned for each application.
The output of the MMRF1018NR1 can be used directly as a current source or voltage source in a wide variety of applications. It can also be used as the main component in amplifying, controlling, and modulating high frequency signals. This device is highly efficient and suitable for use in high-power applications, making it an ideal choice for many modern applications.
The specific data is subject to PDF, and the above content is for reference
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