Allicdata Part #: | MUN5111DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5111DW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | MUN5111DW1T1G Datasheet/PDF |
Quantity: | 1000 |
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Base Part Number: | MUN51**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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MUN5111DW1T1G is an integrated circuit that contains two high voltage transistors in a single package. It is specifically designed for high voltage, low power applications that require fast switching speeds. The MUN5111DW1T1G is ideal for a wide range of motor control, power management, motor speed control, LED lighting, and other high voltage applications.The MUN5111DW1T1G is a bipolar junction transistor (BJT) pre-biased array. The pre-biased array consists of two transistors and one auxiliary transistor. The transistors are connected in series with the collector leads of one transistor connected to the base lead of the other. This configuration allows for faster switching speeds since the output is ignited much faster than a single transistor. The auxiliary transistor is connected in parallel with the two transistors, allowing for current-limiting capability for the circuit, as well as enabling more robust operation.The working principle of the MUN5111DW1T1G is based on the use of two transistors and two resistors as the main components of the circuit. The two resistors, R1 and R2, provide the bias voltage to control the switching of the two transistors. When the input voltage is applied, the bias voltage of the two resistors changes, causing the just transistors to switch.The operating characteristics of the MUN5111DW1T1G can be adjusted to meet specific application requirements. The collector-emitter voltage, current gain, and power dissipation can all be varied by altering the resistors, enabling efficient operation over a range of loads. This makes the MUN5111DW1T1G suitable for a wide array of applications such as motor control, power management, motor speed control, LED lighting, and other high voltage applications.The MUN5111DW1T1G also provides several features that enhance its performance. It has a self-protection function that prevents wrong direction connections, and low input resistance which reduces current flow to prevent overloading. The internal ESD protection also ensures robust operation and ensures the longevity of the device.The MUN5111DW1T1G is a versatile integrated circuit that offers many benefits, including fast switching times, efficient operation, and improved performance in high voltage applications. It is the ideal solution for motor control, power management, motor speed control, LED lighting, and other high voltage applications.The specific data is subject to PDF, and the above content is for reference
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