Allicdata Part #: | MUN5235DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5235DW1T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | MUN5235DW1T1G Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | MUN52**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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MUN5235DW1T1G application field and working principle
MUN5235DW1T1G is a monolithic NPN transistor array which has dual transistors in one package, each having a beta of around 75 and an Hfe of around 35. It has a Pre-Biased (Base current up and running prior to actual use) feature and offers quick switching time for switching applications. The MUN5235DW1T1G transistor array is kind of built to be used in audio amplification, buffer, and line driver applications. It offers some degree of immunity to inductive pop and short circuit failure.
Working Principle
The MUN5235DW1T1G consists of two NPN transistors. Its Pre-Biased (Base current up and running prior to actual use) feature is what basically enables two active transistors to be packaged into one component. Each of these transistors can be operated independently with separate base bias on each unit. Tight controlled Beta and Collector-Emitter Saturation Voltage (VCE) as low as 0.5V makes it suitable for audio frequency applications.
Application Fields
The MUN5235DW1T1G is used in a variety of applications, such as audio amplification, buffer, and line driver. The component’s quick switching characteristics for switching applications, along with immunity to inductive pop and short circuit failure, make it a desirable component for many circuit applications.
Audio Amplification
The MUN5235DW1T1G is suited for audio amplification as it is an efficient signal conditioner. Its tight controlled beta and collector-emitter saturation voltage (VCE) as low as 0.5V make it suitable for audio frequency applications. There is no need of two separate transistors for the same connection, making it great for small audio projects.
Buffer
The MUN5235DW1T1G is also used in buffer applications, as it helps filter out unwanted signals and noise. It can be used as a buffer to drive LED arrays or stepper motors. It helps maintain voltage and current stability without having to use separate transistors.
Line Driver
The MUN5235DW1T1G is also used for line driver applications, as it can drive long signal lines. The dual transistor array provides a very low output impedance, which helps reduce signal loss in long signal runs. It is an efficient way to drive signals over a long distance without having to use additional components.
Conclusion
The MUN5235DW1T1G is a monolithic NPN transistor array with dual transistors in one package. It has a Pre-Biased feature which enables two active transistors to be packaged into one component. It is primarily used in audio frequency applications such as audio amplification, buffer, and line driver. Its efficient signal conditioning characteristics and quick switching characteristics make it a desirable component for many circuit applications.
The specific data is subject to PDF, and the above content is for reference
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