MUN5233DW1T1

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MUN5233DW1T1 is a high performance voltage compensationArray of NPN transistors manufactured by ON Semiconductor. It is a pre-biasedvoltage compensated, complementary low-noise NPN array designed for use inlow-voltage applications with a wide variety of switching, sensing andamplification circuits. The array is designed to provide high-current gain andlow-noise performance as well as a wide variety of active biasing options,making it suitable for a variety of applications.

The MUN5233DW1T1 is part of the NPN selection of bipolar arrays offered byON Semiconductor. It is composed of two NPN transistors each with an emitterconnected to their own base, and to the common emitter. The base of eachtransistor is also connected to their own collector providing a connection formeasuring the current gain of each transistor. This enables each transistor tobe individually biased and operating parameters monitored. This effectivelymakes the MUN5233DW1T1 not just a dual NPN transistor, but an array with twodual transistors.

The main feature of the MUN5233DW1T1 is the integrated on-die biasnetwork. This structure provides low-noise and high-current amplificationperformance for low-voltage applications. The on-die bias network optimizestransistor characteristics for optimal switching and amplifier operation,ensuring low-voltage operation down to the device\'s minimum voltage rating.This makes the device suitable for a wide range of low-voltage applicationssuch as automotive, consumer electronics and LED lighting.

The MUN5233DW1T1 also features a low-current mode of operation, whichprovides power saving features. The device features an on-die active biascircuit, which compensates for any variations in the load or in the supplyvoltage. This ensures that the device can be operated at low quiescentcurrents, reducing power consumption and ensuring high-efficiency operation.In addition, the device also features low-noise performance and severaldifferent biasing options.

The MUN5233DW1T1 is a versatile NPN array enabling a wide variety ofapplications. Its pre-biased voltage compensation feature enables the device tobe operated at low-voltage applications, while its integrated bias networksupport reduces power consumption and improves efficiency. The low-noiseperformance makes it suitable for a variety of amplifier and switchingapplications, and the wide variety of biasing options offer flexibility whenbuilding circuits. It is a very useful device for a variety of circuitdesigns.

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