Allicdata Part #: | MUN5115DW1T1GOSTR-ND |
Manufacturer Part#: |
MUN5115DW1T1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.25W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | MUN5115DW1T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02891 |
6000 +: | $ 0.02514 |
15000 +: | $ 0.02137 |
30000 +: | $ 0.02011 |
75000 +: | $ 0.01886 |
150000 +: | $ 0.01676 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 160 @ 5mA, 10V |
Base Part Number: | MUN51**DW1T |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 250mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The MUN5115DW1T1G is an extremely important part of semiconductor technology; it is an array of pre-biased bipolar junction transistors (BJT) used as a switch. With its impressive array of features, such as low on-resistance, medium power dissipation and high-voltage capability, this device is frequently used in a variety of applications.
This device was designed to provide efficient, low on-resistance switching in medium-sized applications. As a result, it is used in many consumer electronics and automotive designs, such as cellphone chargers and engine control systems. Furthermore, it is also used in industrial applications, such as machines and manufacturing processes.
The structure of the MUN5115DW1T1G consists of three NPN and three PNP transistors connected in the same way. Each transistor is individually pre-biased and is capable of operating up to 60V. This device is then mounted onto a six-pin heat-sinkable surface-mount package which reduces total power dissipation.
The operation of the MUN5115DW1T1G is quite simple; when the switch is ‘on’, the device has low on-resistance and allows for current to flow between the source and the drain. When the switch is ‘off’, the device has very high on-resistance and does not allow for any current flow, thus effectively disconnecting the source and the drain.
In addition, the MUN5115DW1T1G also features a wide range of protection features, such as over-temperature protection and over-current protection. Over-temperature protection prevents damage from occurring to the device by shutting down the switch when it gets too hot. On the other hand, over-current protection prevents the device from becoming damaged when too much current is flowing through it.
The MUN5115DW1T1G is also a highly reliable device; it has impressive dimensional stability (which helps to ensure consistent performance even after multiple shocks) and a very low failure rate over time.
To sum up, the MUN5115DW1T1G is an array of pre-biased BJTs used as a switch in many types of applications. It features low on-resistance, medium power dissipation and high-voltage capability, as well as a wide range of protection features. Furthermore, this device is also highly reliable, making it a popular choice for many applications and industries.
The specific data is subject to PDF, and the above content is for reference
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