MUN5215DW1T1G Allicdata Electronics
Allicdata Part #:

MUN5215DW1T1GOSTR-ND

Manufacturer Part#:

MUN5215DW1T1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.25W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: MUN5215DW1T1G datasheetMUN5215DW1T1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: MUN52**DW1T
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 250mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The MUN5215DW1T1G is an array of eight 2N5215 pre-biased bipolar junction transistors (BJTs). The wide array of features, parameters, and performance capabilities make this device suitable for both high-reliability and general purpose applications, including analog switching and power amplifying.

The MUN5215DW1T1G is designed with self-priming technology and handles mixer amplifying, switching, small-signal amplification, and DC power supply protection. Each of the eight transistors is an NPN type featuring a small, low power package, making it suitable for space-constrained applications.

The Pre-Biased feature of the MUN5215DW1T1G allows each BJT to remain static as long as the applied voltage is kept below a certain level. This ensures that high-frequency signals consumed by the device are not corrupted, while still being able to provide sufficient output power. This feature also enables a smaller size and better reliability than other transistors of the same scale, making it ideal for applications that require long-term uninterrupted operation.

The chief working principle of the MUN5215DW1T1G depends on the movement of electrons and holes through the PN junction of the transistor. This is known as BJT current flow and is the basis of its switching characteristic. The Pre-Biased feature of the device prevents transistor current from experiencing large variations caused by varying Vbe, allowing for better performance in switching and amplifying.

The MUN5215DW1T1G is well-suited for high-reliability applications such as microwave amplifiers and military-grade devices. It can also be used in automotive and telecom applications, as well as general purpose industrial gear such as receivers, linear regulators, and driver-motor control systems.

The MUN5215DW1T1G is an ideal choice for applications that require strong switching characteristics, low power operation, and fast response time. It ensures the desired performance in small spaces, while also standing up against frequent voltage fluctuations and high temperatures.

The specific data is subject to PDF, and the above content is for reference

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