Allicdata Part #: | MUN5236T1GOS-ND |
Manufacturer Part#: |
MUN5236T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 202MW SC70-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | MUN5236T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 202mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Base Part Number: | MUN52**T |
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The MUN5236T1G is a single pre-biased Bipolar Junction Transistor (BJT). It is specifically designed to provide superior performance in large power BJT applications. The MUN5236T1G is capable of providing high current gain and low saturation voltage, making it an excellent choice for applications such as direct current/direct voltage (DC/DC) converters and current mode controlled power supplies.
The MUN5236T1G is a gain-over-temperature pre-biased transistor with a base-emitter breakdown voltage of 6V. It features an integrated base resistor and collector-emitter diode, making it easier to drive and provide higher performance in demanding environments. It is built on an advanced technology process, enabling it to deliver improved temperature stability, reliability, and power dissipation.
The MUN5236T1G is a gain controlled device, meaning that its current gain is dependent on the amount of current flowing through its base. This allows the transistor to be used in situations where the current gain needs to be adjusted and maintained over different environmental conditions. The built-in base resistor also helps in maintaining a constant, low-noise operation, thus providing improved performance in applications like amplifiers and oscillators.
The MUN5236T1G is designed to be used in applications where it is necessary to dissipate large amounts of power. It is rated for a total power dissipation of up to 25 W, making it an ideal choice for use in high power applications. Moreover, the MUN5236T1G is equipped with built-in thermal and power protection, making it an even better option for applications where power loss or thermal runaway is a concern.
The MUN5236T1G is also designed to be used in conjuction with external emitter resistors to provide adjustable gain control. The emitter resistor is used to control the gain of the transistor, which allows the user to maintain a desired current gain level over temperature and environmental variations. The built-in base resistor helps to provide a better power efficiency, in addition to improved noise performance.
Overall, the MUN5236T1G is an excellent choice for applications that require high current gain and low saturation voltage. Its integrated base and emitter resistors, combined with its high power dissipation rating, make it an ideal solution for direct current/direct voltage (DC/DC) converters and current mode controlled power supplies. Its ability to provide adjustable and temperature-stable gain control make it a great option for high power amplifier and oscillator applications.
The specific data is subject to PDF, and the above content is for reference
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