MUN5311DW1T2G

DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Base Part Number:	MUN53**DW1
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	10 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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MUN5311DW1T2G is a family of pre-biased NPN Darlington transistors array. This device is well-suited for use in various applications such as high current drivers, current sink, and buffer amplifiers. It is also used in battery powered devices as a low on-resistor switch.The MUN5311DW1T2G is an array of low-power NPN Darlington transistors. The Darlington configuration provides extremely high current gain, which is the ratio of the output current with respect to the input current. Due to its low on-resistance and current gain, it is ideally suited for applications requiring high current drive capability and low on-resistance. The low-level current drive capability of the device adds flexibility to the design of the circuit and allows for the use of different load types.The array consists of eight NPN transistors each of which are pre-biased to the VBE2 voltage. This voltage is the voltage drop across the base-emitter junction of the 2nd transistor when there is no external base current. The pre-bias function applies a small current to the base of the 2nd transistor, which causes both the collector and emitter currents of the device to be equal. The device is able to handle up to 20V at the emitter, collector and base pins.The device is fabricated with an integrated layer of silicon-oxide-nitride-oxide-silicon (SONOS) gate dielectric between the drain and gate electrodes of the device. This insulating layer provides the device with greater temperature stability, increased drive capability, and improved latch-up immunity. The SONOS dielectric is also responsible for the low level of parasitics associated with the device.The switching speed of the MUN5311DW1T2G is quite fast, which makes it ideal for use in pulse-width modulation (PWM) and time-division multiplexing (TDM) applications. The device also offers threshold and turn-on voltages that are lower than those of other similar devices and has a wide range of operating temperatures. Furthermore, the device is designed in a wide-body SOIC-8 package which is ideal for use in high-density switch circuit boards.Applications of the MUN5311DW1T2G can be divided into two main categories. The first is for high current drive applications such as motors and valves, where the low on-resistance and high current gain make it well suited. The second category is for low voltage applications such as touch screens, LED lighting, and portable devices, where the low voltage drive capability of the device allows for the use of a wider range of load types.In summary, the MUN5311DW1T2G pre-biased NPN Darlington transistor array is an extremely versatile device suitable for a variety of applications. It has low on-resistance, high current gain, and wide-body SOIC-8 packaging. It is well suited for use in high current drive and low voltage applications, making it an ideal solution for a range of applications.

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