MUN5335DW1T2G

DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	MUN53**DW1
Supplier Device Package:	SC-88/SC70-6/SOT-363
Package / Case:	6-TSSOP, SC-88, SOT-363
Mounting Type:	Surface Mount
Power - Max:	250mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	2.2 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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MUN5335DW1T2G is a bipolar junction transistor array pre-biased by ON Semiconductor and is a superior device used in a variety of applications. The MUN5335DW1T2G array has high gain, low noise, integrated protection circuitry, and excellent thermal characteristics, making it an ideal solution for many applications such as consumer, healthcare, and industrial applications.The MUN5335DW1T2G is a monolithic array of eight NPN bipolar transistors with an isolation buffer designed for universal applications and features high voltage capability up to 45V, high collector current and a wide operating voltage range from 5.5V up to 45V. This array operates from a single power supply, and is designed for convenience and cost savings with eight NPN transistors in one IC package. Furthermore, each transistor features isolated base terminals for easy layout, making the MUN5335DW1T2G well suited for use in a variety of applications.The MUN5335DW1T2G has an integrated protection circuit which includes an internal thermal overload protection to protect the device from excessive current and an ESD protection diode to protect against electrostatic discharges. Additionally, the device has a high output current of up to 100mA per transistor and a wide emitter-base voltage range of up to 40V, allowing the MUN5335DW1T2G to be used in a wide range of applications where voltage, current and temperature are important.The working principle of the MUN5335DW1T2G is based on the basic operation of a bipolar junction transistor. As an active component in a circuit, the MUN5335DW1T2G is used to amplify current. This is achieved by connecting the base of the transistor to a current source and creating a current flow from the emitter to the collector which is proportional to the base current. The amplification occurs when the collector current is greater than the base current. The pre-biased version of the device eliminates the need for external biasing components, allowing the device to be used in a variety of applications with minimal external components.The MUN5335DW1T2G is an ideal device for applications requiring a higher voltage, current, and temperature range. The integrated ESD protection and thermal overload protection allow the device to operate in harsh environments and the wide voltage and current range make it suitable for a variety of applications. The device is also well suited for power management applications, such as DC-DC converters and switch mode power supplies. Furthermore, the MUN5335DW1T2G is ideal for high-side switching and LED driving, as well as for use in automotive, industrial, and consumer applications.

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