NGTB05N60R2DT4G Allicdata Electronics

NGTB05N60R2DT4G Discrete Semiconductor Products

Allicdata Part #:

NGTB05N60R2DT4GOSTR-ND

Manufacturer Part#:

NGTB05N60R2DT4G

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 5A 600V DPAK
More Detail: IGBT 600V 16A 56W Surface Mount DPAK
DataSheet: NGTB05N60R2DT4G datasheetNGTB05N60R2DT4G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
2500 +: $ 0.27181
5000 +: $ 0.25887
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Power - Max: 56W
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Reverse Recovery Time (trr): 70ns
Test Condition: 300V, 5A, 30 Ohm, 15V
Td (on/off) @ 25°C: 44ns/82ns
Gate Charge: 30nC
Input Type: Standard
Switching Energy: 188µJ (on), 60µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Current - Collector Pulsed (Icm): 20A
Current - Collector (Ic) (Max): 16A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The NGTB05N60R2DT4G is from the range of IGBTs, which are a type of transistor designed for use in high current, high voltage applications that require a fast switching speed. The IGBT is a hybrid of two common types of transistors - the Bipolar Junction Transistor (BJT) and the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The NGTB05N60R2DT4G is a single-source IGBT, meaning it is more suitable for applications that only require one input.The NGTB05N60R2DT4G is rated for a maximum voltage of 600V and a maximum current of 5A. It has a decent switching speed of around 100V/us and has a relatively low gate threshold voltage, making it easy to drive with low power applications. It also offers a wide temperature range of -40 to 150 degrees Celsius. With these attributes, the NGTB05N60R2DT4G is ideal for use in high speed switching circuits such as AC motor control, power supplies and consumer electronic applications.When it comes to the working principle of the NGTB05N60R2DT4G, it has the same working principle as other IGBTs. This means that the device is designed to control an electrical current by using an input signal to control the resistance of the device. The input signal acts as the gate voltage, which controls the flow of the current through the device.When the gate voltage is low, the resistance of the IGBT is high, preventing the current from passing through the device. On the other hand, when the gate voltage is high, the resistance of the IGBT is lowered, allowing the current to flow through it. The IGBTs also provide a smooth commutation of current when the gate voltage is turned off and on again, which makes it suitable for use in applications such as power supplies, AC motor controls and many other applications.Overall, the NGTB05N60R2DT4G IGBT is a great device to use in applications that require high current, high voltage, and fast switching speed. Its wide temperature range and low gate threshold voltage make it ideal for a variety of applications. Furthermore, its working principle is the same as other IGBTs, making it easy to use and understand.

The specific data is subject to PDF, and the above content is for reference

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