NGTB20N120IHTG

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Insulated Gate Bipolar Transistor (IGBT) has become one of the most promising power semiconductor device. The NGTB20N120IHTG is a robust IGBT module designed and manufactured by ON SEMICONDUCTOR. It is a dual IGBT with an inherently-matched anti-parallel diode module housed in a through-hole package package. It is designed for high performance and convenient power management in medium and low voltage applications.

The NGTB20N120IHTG is a high power, N-channel IGBT module with a junction temperature rating of 150 °C and a maximum blocking voltage (Vce) of 1200 V. This IGBT module is suitable for use in a variety of electronic devices, such as switched-mode power supplies, UPS modules, DC-DC converters and PFC circuits, as well as in machines that require high-power control, like industrial robots. Its wide variety of features and benefits makes it an effective solution for many modern industrial applications.

The NGTB20N120IHTG features a high speed turn-on and turn-off switching with low gate-emitter saturation voltage, making it suitable for high switching frequency applications. It offers excellent current density and power cycling capability, making it more reliable and efficient option in comparison to other similar IGBTs. The low gate charge of this IGBT also allows for better efficiency in high-current applications.

The NGTB20N120IHTG operates in two working modes, active and reverse conduction modes. In the active mode, the IGBT is in the conducting state and the current flows from the collector to the emitter. In the reverse conduction mode, the IGBT is off and the current flows from the emitter to the collector. This reverse mode is mainly used in applications that need fast switching and protection of the device under heavy load and high power applications.

When compared to traditionally used diodes and thyristors, NGTB20N120IHTG offers better performance and efficiency due to its low conduction losses and low switching losses. The module is designed with high integration and low additional cost, making it the ideal choice for medium and low-voltage applications. The NGTB20N120IHTG is also available with optimized gate drive and control options, which make it easier to apply in various systems.

In summary, NGTB20N120IHTG is an IGBT package module with many features and benefits that make it an effective and reliable solution for a variety of applications. With its high power switching, low conduction losses and low gate charge, the IGBT is the perfect choice for many industrial applications. It is also easy to install and provides excellent power management for increased efficiency and performance.

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