NGTB20N120IHLWG

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IGBT (Insulated-gate Bipolar Transistor) is a three-terminal power semiconductor device, combining the best characteristics of both MOSFET (metal–oxide–semiconductor field-effect transistor) and bipolar junction transistor (BJT). It is capable of very high current- and power-handling capacity, yet offers the benefits of low-power dissipation, fast switching times and high immunity to cross-conduction faults. NGTB20N120IHLWG is a single-chip IGBT with a rated collector current of 20 Amperes and a collector-emitter voltage of 1200 Volts.

The application fields of NGTB20N120IHLWG IGBTs are wide and include motor control, solar energy, home appliances, electric vehicles, HVAC/R systems, UPS, etc. The high voltage levels of this IGBT enable it to deliver switching speeds over 20 kHz, which makes it very suitable for high-frequency electromagnetic field interrupters and inverters in renewable solar and wind power systems. Also, due to its high pulse current capability and low-power dissipation rating, it could be employed in various overcurrent protection applications and module junctions. Moreover, the device features low overtemperature protection level, together with short-circuit current limitation which makes it more adapted for use in equipment that requires redundancy and fast response.

Regarding the operating principle, NGTB20N120IHLWG IGBTs have a much superior switching behavior compared to conventional bipolar transistors, since the gate controls whether the current flows directly between the emitter and collector or not. In its “OFF” state, when there isn’t any gate current, a very high resistance exists between emitter and collector, blocking any conductive path. When a voltage is applied to the gate, owing to the high impedance, only a very small amount of current is required to induce a current flow between emitter and collector. This means that the IGBT can switch on and off in extremely short time intervals, often within a few microseconds.

In conclusion, the NGTB20N120IHLWG IGBT is an advanced device that presents optimal performance and high current- and power-handling capacities. This IGBT’s application fields cover a diverse range of environments and products, from efficiency solar energy systems to high-frequency isolators for electrical control. Also, its advanced operating principle and low-power dissipation make it suitable for sophisticated redundant protection applications.

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