NGTB20N135IHRWG

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NGPT20N135IHRWG transistor is part of the NGPT20 N-Channel IGBT family, which falls in the category of Single IGBTs. Single IGBTs integrate a MOSFET and a bipolar junction transistor (BJT) in one package, which results in an increased power efficiency as well as a higher switching speed. The NGPT20N135IHRWG transistor is one of the most commonly used IGBTs in the market, and is designed for applications ranging from industrial motor drives, UPS, solar inverters, HVDC converters to general purpose AC/DC converters. Due to its application field, the transistor is designed to withstand high surge voltages and switch currents.

As its name suggests, the NGPT20N135IHRWG transistor employs a phase control technology developed by its manufacturer, which is based on N-channel vertical field-stop technology. This technology helps the transistor to keep its breakdown voltage relatively low while maintaining a higher current rating. The device also has an innovative design that helps to reduce losses, leading to improved efficiency and lower heat dissipation. In addition, the use of special dielectric materials reduces the chance of an electric arc forming between the drain and source connections, which further enhances safety.

In terms of operating principles, the NGPT20N135IHRWG transistor is based on a principle called “phase control” and operates by controlling the amount of energy transferred to the load during each cycle. When the gate voltage is higher than the source voltage, the positive charge carriers in the channel are attracted to the gate, and more power will be transferred from the source to the load at a faster rate. Conversely, when the gate voltage is lower than the source voltage, negative charge carriers are repelled from the gate, and power transfer from the source will decrease. This variation in power transfer can be used to regulate the amount of energy sent to a load.

The transistor also has a high surge voltage rating of 1800V, which allows it to withstand higher voltage spikes without being damaged. In addition, it has an average switching speed of 730V/ns, which helps to reduce losses in the circuits it powers. The device also has low gate resistance and low gate charge, which helps to improve its efficiency even further. Lastly, the device can be used in a wide temperature range (-40°C to 150°C), which makes it suitable for a variety of applications.

The NGPT20N135IHRWG transistor is a powerful and reliable device designed for use in industrial motor drives, UPS, solar inverters, HVDC converters and general purpose AC/DC converters. It employs a phase control technology that helps to regulate the amount of energy transferred to the load, while its high surge voltage rating and low switching speed help to improve its efficiency. In addition, the device can be used in a wide temperature range, making it suitable for use in a variety of environments. With its robust design and versatile application fields, the NGPT20N135IHRWG transistor is an ideal choice for powering a range of devices and circuits.

The specific data is subject to PDF, and the above content is for reference