NGTB20N120LWG

IGBTs are a type of semiconductor device commonly used for power electronics. The NGTB20N120LWG is a single IGBT of the Field Stop Trench-Gate Bipolar Transistor (FSTGBT) family from Infineon Technologies AG. The device has an improved overall performance compared to the SMPS-IGBT and the SPA IGBT families and is characterized by ultra-fast switching transitions and low on-state voltages. This device is suitable for a wide range of applications, including power and motor control.

The NGTB20N120LWG is designed to minimize switching losses, making it ideal for power-sensitive applications. The device operates at a minimum on state voltage of 1.2V, which reduces the turn-on voltage required and maximizes device performance. It also features a low forward voltage drop and a shielded gate structure to reduce switching losses. The device has a maximum continuous collector current of 30A and a maximum power dissipation of 540 watts.

The NGTB20N120LWG is available in a TO-247 three-pin package and is typically used for connecting power components such as power drives or transformers, or for static and dynamic power electronics. The three pins of the device are the collector, the base, and the emitter. The collector is the high-current terminal and is connected to the power component, while the base is the control terminal and is connected to the control unit. The emitter is the low-current terminal and is connected to a ground.

The NGTB20N120LWG is a switching device and is used mainly to switch high current and voltage. The device works under the principles of a bipolar transistor, which consists of two junctions, namely the base-emitter junction and the collector-emitter junction. The device is an N-type device, meaning it consists of an N-type base material and a P-type emitter and collector material. The base-emitter junction is forward biased at all times, while the collector-emitter junction is switched on and off by applying a voltage to the base terminal. When the voltage applied to the base is zero, the collector-emitter junction is off, or in its low resistance state, meaning no current flows between the collector and the emitter. When the voltage applied to the base is higher than the turn-on voltage of the device, the collector-emitter junction is on and the device is in its high resistance state, allowing the current to flow between the collector and the emitter.

The NGTB20N120LWG is suitable for a wide range of applications, including static and dynamic power control, driving power components such as transformers and motors, soft switching circuits, and for use in high frequency inverters or DC-AC converters. The device also offers excellent reliability and a range of protection features, making it suitable for harsh environments. The NGTB20N120LWG is especially suitable for applications where high switching frequencies, high efficiency, power density, and low EMI are required.