NGTB25N120LWG Allicdata Electronics
Allicdata Part #:

NGTB25N120LWGOS-ND

Manufacturer Part#:

NGTB25N120LWG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 1200V 50A 192W TO247-3
More Detail: IGBT Trench Field Stop 1200V 50A 192W Through Hole...
DataSheet: NGTB25N120LWG datasheetNGTB25N120LWG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 50A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Power - Max: 192W
Switching Energy: 3.4mJ (on), 800µJ (off)
Input Type: Standard
Gate Charge: 200nC
Td (on/off) @ 25°C: 89ns/235ns
Test Condition: 600V, 25A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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IGBTs are an important class of semiconductors widely used in today’s electronics. In particular, the N GTB25N120LWG is a type of insulated gate bipolar transistor (IGBT) commonly used in many electronic applications. An IGBT is defined as a semiconductor device with three terminals (emitter, base, and collector) that is used to control current flow between two terminals, the emitter and the collector. This type of transistor is used to convert an alternating current (AC) to a direct current (DC) by using a voltage switch between two electrical resistors.

The N GTB25N120LWG is a single type of IGBT and has a threshold voltage of 25 volts and a maximum current of 120 amperes. This transistor has a high collector-emitter (C-E) breakdown voltage which is about 1200 volts. It also has a low gate-emitter (G-E) voltage of 5 volts.

The main application of the N GTB25N120LWG is for power applications such as motor control, AC and DC motor drives, and DC-DC converters. IGBTs such as the N GTB25N120LWG can be used in a wide range of applications where high power is needed. These include inverters, inverter-driven switching power supplies, and AC switch mode power supplies.

In terms of working principles, IGBTs are essentially transistors with four different operating states. The four states include the forward conduction, reverse conduction, off, and short-circuit mode. When the base voltage is increased, the voltage at the collector decreases, making a current-carrying loop (circuit). When the reverse voltage is applied, the same current-carrying loop is disrupted and the N GTB25N120LWG enters a reversed mode. This reversed mode has a lower power dissipation compared to the forward mode due to the different base and emitter voltages applied.

The N GTB25N120LWG is a unique type of IGBT with its high C-E breakdown voltage and low G-E voltage. Its use in many power applications gives it the versatility to be used in a variety of different electronic devices. As it allows for fast switching times, the N GTB25N120LWG can be used in high power switching applications, making it ideal for power applications such as DC-DC converters, motor drives, and inverters.

In summary, the N GTB25N120LWG is a single type of IGBT that is mainly used in power applications such as motor control, AC and DC motor drives, and DC-DC converters. Its high C-E breakdown voltage and low G-E voltage make it ideal for switching power supplies and inverter-driven switch power supplies. Its four operating states (forward conduction, reverse conduction, off, and short-circuit mode) make it a versatile device and allow for fast switching times. With its versatility and high power capability, the N GTB25N120LWG is an essential component in many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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