Allicdata Part #: | NGTB25N120LWGOS-ND |
Manufacturer Part#: |
NGTB25N120LWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 50A 192W TO247-3 |
More Detail: | IGBT Trench Field Stop 1200V 50A 192W Through Hole... |
DataSheet: | NGTB25N120LWG Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 50A |
Current - Collector Pulsed (Icm): | 200A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 25A |
Power - Max: | 192W |
Switching Energy: | 3.4mJ (on), 800µJ (off) |
Input Type: | Standard |
Gate Charge: | 200nC |
Td (on/off) @ 25°C: | 89ns/235ns |
Test Condition: | 600V, 25A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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IGBTs are an important class of semiconductors widely used in today’s electronics. In particular, the N GTB25N120LWG is a type of insulated gate bipolar transistor (IGBT) commonly used in many electronic applications. An IGBT is defined as a semiconductor device with three terminals (emitter, base, and collector) that is used to control current flow between two terminals, the emitter and the collector. This type of transistor is used to convert an alternating current (AC) to a direct current (DC) by using a voltage switch between two electrical resistors.
The N GTB25N120LWG is a single type of IGBT and has a threshold voltage of 25 volts and a maximum current of 120 amperes. This transistor has a high collector-emitter (C-E) breakdown voltage which is about 1200 volts. It also has a low gate-emitter (G-E) voltage of 5 volts.
The main application of the N GTB25N120LWG is for power applications such as motor control, AC and DC motor drives, and DC-DC converters. IGBTs such as the N GTB25N120LWG can be used in a wide range of applications where high power is needed. These include inverters, inverter-driven switching power supplies, and AC switch mode power supplies.
In terms of working principles, IGBTs are essentially transistors with four different operating states. The four states include the forward conduction, reverse conduction, off, and short-circuit mode. When the base voltage is increased, the voltage at the collector decreases, making a current-carrying loop (circuit). When the reverse voltage is applied, the same current-carrying loop is disrupted and the N GTB25N120LWG enters a reversed mode. This reversed mode has a lower power dissipation compared to the forward mode due to the different base and emitter voltages applied.
The N GTB25N120LWG is a unique type of IGBT with its high C-E breakdown voltage and low G-E voltage. Its use in many power applications gives it the versatility to be used in a variety of different electronic devices. As it allows for fast switching times, the N GTB25N120LWG can be used in high power switching applications, making it ideal for power applications such as DC-DC converters, motor drives, and inverters.
In summary, the N GTB25N120LWG is a single type of IGBT that is mainly used in power applications such as motor control, AC and DC motor drives, and DC-DC converters. Its high C-E breakdown voltage and low G-E voltage make it ideal for switching power supplies and inverter-driven switch power supplies. Its four operating states (forward conduction, reverse conduction, off, and short-circuit mode) make it a versatile device and allow for fast switching times. With its versatility and high power capability, the N GTB25N120LWG is an essential component in many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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