Allicdata Part #: | NGTB15N60R2FGOS-ND |
Manufacturer Part#: |
NGTB15N60R2FG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 15A 600V TO220-3 |
More Detail: | IGBT 600V 24A 54W Through Hole TO-220F-3FS |
DataSheet: | NGTB15N60R2FG Datasheet/PDF |
Quantity: | 250 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 54W |
Supplier Device Package: | TO-220F-3FS |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | 175°C (TJ) |
Reverse Recovery Time (trr): | 95ns |
Test Condition: | 300V, 15A, 30 Ohm, 15V |
Td (on/off) @ 25°C: | 70ns/190ns |
Gate Charge: | 80nC |
Input Type: | Standard |
Switching Energy: | 550µJ (on), 220µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 60A |
Current - Collector (Ic) (Max): | 24A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The NGTB15N60R2FG is a 15A Trench-Gate Bipolar Power MOSFET from ONsemiconductor, specifically designed to address high-performance, power-management applications that require low gate charge and high current capacity. It is encapsulated in the industry-standard TO-220F package and is built using an advanced field-stop IGBT technology with a dual-gate insulation structure.
This N-channel device has an enhancement-mode operation and is suitable for freewheeling, switching, and snubber circuits. It exhibits high Avalanche capability, low ON-resistance, and fast switching times. This device also offers low operation and switching losses, resistance to noise, and excellent thermal performance.
Application Field
The NGTB15N60R2FG is specifically designed for use in high-performance and power-management applications, including but not limited to:
- DC-DC conversion
- UPS systems
- Automatic Voltage Regulation (AVR)
- AC to DC conversion
- DC to AC conversion
- Power Factor Correction (PFC)
- Power supply control
- Switching regulators
- Motor control
- Outdoor lighting
- Solar inverters
- Air conditioners
- Refrigerators
Working Principle
The NGTB15N60R2FG is based on an advanced field-stop IGBT technology with a dual-gate insulation structure. This makes it ideal for applications that require a high current capacity and low gate charge. The device has an enhancement-mode operation and an N-channel. This makes it a good choice for freewheeling, switching, and snubber circuits.
The NGTB15N60R2FG has a threshold voltage of V(to) = 5V and a low ON-resistance of RON (max) = 11mΩ. It exhibits excellent thermal performance, high Avalanche capability, and fast switching times. This device also features low operation and switching losses, as well as resistance to noise.
The NGTB15N60R2FG is an ideal choice for applications that need reliable and high-performance power management. It has an industry-standard TO-220F package, making it an ideal choice for applications that require a larger heatsink area.
Overall, the NGTB15N60R2FG is an ideal choice for those who need reliable and high-performance power management. With its advanced field-stop IGBT technology and dual-gate insulation structure, the device is capable of delivering excellent performance even under heavy load.
The specific data is subject to PDF, and the above content is for reference
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