NGTB15N60R2FG Allicdata Electronics
Allicdata Part #:

NGTB15N60R2FGOS-ND

Manufacturer Part#:

NGTB15N60R2FG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 15A 600V TO220-3
More Detail: IGBT 600V 24A 54W Through Hole TO-220F-3FS
DataSheet: NGTB15N60R2FG datasheetNGTB15N60R2FG Datasheet/PDF
Quantity: 250
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 250Can Ship Immediately
Specifications
Power - Max: 54W
Supplier Device Package: TO-220F-3FS
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Reverse Recovery Time (trr): 95ns
Test Condition: 300V, 15A, 30 Ohm, 15V
Td (on/off) @ 25°C: 70ns/190ns
Gate Charge: 80nC
Input Type: Standard
Switching Energy: 550µJ (on), 220µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 24A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The NGTB15N60R2FG is a 15A Trench-Gate Bipolar Power MOSFET from ONsemiconductor, specifically designed to address high-performance, power-management applications that require low gate charge and high current capacity. It is encapsulated in the industry-standard TO-220F package and is built using an advanced field-stop IGBT technology with a dual-gate insulation structure.

This N-channel device has an enhancement-mode operation and is suitable for freewheeling, switching, and snubber circuits. It exhibits high Avalanche capability, low ON-resistance, and fast switching times. This device also offers low operation and switching losses, resistance to noise, and excellent thermal performance.

Application Field

The NGTB15N60R2FG is specifically designed for use in high-performance and power-management applications, including but not limited to:

  • DC-DC conversion
  • UPS systems
  • Automatic Voltage Regulation (AVR)
  • AC to DC conversion
  • DC to AC conversion
  • Power Factor Correction (PFC)
  • Power supply control
  • Switching regulators
  • Motor control
  • Outdoor lighting
  • Solar inverters
  • Air conditioners
  • Refrigerators

Working Principle

The NGTB15N60R2FG is based on an advanced field-stop IGBT technology with a dual-gate insulation structure. This makes it ideal for applications that require a high current capacity and low gate charge. The device has an enhancement-mode operation and an N-channel. This makes it a good choice for freewheeling, switching, and snubber circuits.

The NGTB15N60R2FG has a threshold voltage of V(to) = 5V and a low ON-resistance of RON (max) = 11mΩ. It exhibits excellent thermal performance, high Avalanche capability, and fast switching times. This device also features low operation and switching losses, as well as resistance to noise.

The NGTB15N60R2FG is an ideal choice for applications that need reliable and high-performance power management. It has an industry-standard TO-220F package, making it an ideal choice for applications that require a larger heatsink area.

Overall, the NGTB15N60R2FG is an ideal choice for those who need reliable and high-performance power management. With its advanced field-stop IGBT technology and dual-gate insulation structure, the device is capable of delivering excellent performance even under heavy load.

The specific data is subject to PDF, and the above content is for reference

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