NGTB75N65FL2WAG Discrete Semiconductor Products

Power - Max:	536W
Supplier Device Package:	TO-247-4L
Package / Case:	TO-247-4
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	90ns
Test Condition:	400V, 75A, 10 Ohm, 15V
Td (on/off) @ 25°C:	23ns/157ns
Gate Charge:	310nC
Input Type:	Standard
Switching Energy:	610µJ (on), 1.2mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 75A
Current - Collector Pulsed (Icm):	200A
Current - Collector (Ic) (Max):	200A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction: NGTB75N65FL2WAG

The NGTB75N65FL2WAG is a 75V IGBT (Insulated-Gate Bipolar Transistor) that is commonly used in motor control and drive systems. This type of transistor is classified as a single IGBT and is composed of two power terminals (collector and emitter) and an insulation gate that acts as a switch. A single IGBT can be used as a self-contained power switch, but this article will focus primarily on the application field and working principle of the NGTB75N65FL2WAG IGBT.

Application Field

The most common application field for the NGTB75N65FL2WAG IGBT is motor control and drives systems. It is designed for use in brushless DC, AC induction, and permanent magnet synchronous motor controls. It is used in a variety of applications, such as traction control systems, HVAC systems, elevators, and electric vehicles. The transistor also finds use in industrial equipment and power conversion circuits.In addition to its use in motor control and drive systems, the transistor can also be used for general switching applications. It has the ability to switch high currents with a low on-resistance, making it suitable for high-power applications. Furthermore, it is capable of high-frequency switching, making it ideal for use in DC-DC converters and high-frequency inverters.

Working Principle

The working principle of the NGTB75N65FL2WAG IGBT is based on the concept of a Gate Turn-off Thyristor (GTO). Like a thyristor, an IGBT is capable of controlling very large currents and high voltages. However, the IGBT has an additional feature that the thyristor does not - the gate turn-off. The gate turn-off feature allows the IGBT to switch off quickly and completely, making it suitable for high-power switching applications.The basic function of an IGBT is to act as a current switch. This type of transistor is composed of two power terminals (collector and emitter) and an insulation gate. The gate is used to control the transistor’s current flow. When a positive voltage is applied to the gate, it causes the transistor to switch on and allow current to flow through the collector and emitter. Conversely, when the voltage is removed from the gate, the transistor will switch off and no current will flow.In the case of the NGTB75N65FL2WAG IGBT, the transistor has a voltage rating of 75V and can handle up to 95A of continuous current. It has an on-resistance of 0.03 Ohms and a maximum power dissipation of 83W.

Conclusion

In conclusion, the NGTB75N65FL2WAG is a 75V IGBT that is designed for use in motor control and drive systems. It can be used for general switching applications, DC-DC converters, and high-frequency inverters. The working principle of the transistor is based on the concept of a Gate Turn-off Thyristor (GTO) and it is capable of controlling very large currents and high voltages.

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