NGTB35N60FL2WG Allicdata Electronics
Allicdata Part #:

NGTB35N60FL2WGOS-ND

Manufacturer Part#:

NGTB35N60FL2WG

Price: $ 2.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 70A 300W TO247
More Detail: IGBT Trench Field Stop 600V 70A 300W Through Hole ...
DataSheet: NGTB35N60FL2WG datasheetNGTB35N60FL2WG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.16000
10 +: $ 2.09520
100 +: $ 2.05200
1000 +: $ 2.00880
10000 +: $ 1.94400
Stock 1000Can Ship Immediately
$ 2.16
Specifications
Power - Max: 300W
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 68ns
Test Condition: 400V, 35A, 10 Ohm, 15V
Td (on/off) @ 25°C: 72ns/132ns
Gate Charge: 125nC
Input Type: Standard
Switching Energy: 840µJ (on), 280µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 70A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs, short for insulated gate bipolar transistors, are components used in a wide range of industrial, commercial and domestic applications. NGTB35N60FL2WG is a specific type of IGBT that is designed with an isolated transistor gate to protect the device from damage caused by the high-voltage switching operations or hot-swapping. This article will provide an overview of the application field and working principle of NGTB35N60FL2WG.

Application Field of NGTB35N60FL2WG

NGBT35N60FL2WG is used in a variety of industrial and commercial applications, including motor speed control, power electronics, communication, lighting, security and electric vehicles. It is also suitable for switch-mode power supplies, DC-DC converters and UPS applications. This IGBT can be used in a variety of industrial and commercial applications such as motor speed control, power electronics, communication, lighting, security and electric vehicles.

Working Principle of NGTB35N60FL2WG

NGTB35N60FL2WG IGBT is based on the principle of controlling the electric current between two resistive layers by using an insulated gate. The working principle of the IGBT involves the application of a current at the gate, which generates a voltage across the insulated layer. This voltage, in turn, changes the resistance of the second layer, which results in a change in electric current.

The input signal, which is applied to the gate of the IGBT, is a voltage signal. When the voltage signal is higher than the threshold voltage of the device, the electrical current passes through the IGBT. The current passes through the device in two directions, from Source to Drain and from Drain to Source. The rate of current flow is determined by the voltage applied to the gate.

The IGBT is used for switching operations and the operation is completely controllable. The use of insulated gate ensures that the device is protected from damage caused by high-voltage switching operations or hot-swapping. With the help of this IGBT, high-power and high-voltage circuits can be easily controlled and operated in a safe manner.

Conclusion

NGBT35N60FL2WG is a highly efficient insulated gate bipolar transistor that can be used in a wide range of industrial, commercial and domestic applications. The application field of the device includes motor speed control, power electronics, communication, lighting, security and electric vehicles. The working principle of the device involves using an insulated gate to control the electric current between two resistive layers. The use of insulated gate ensures that the device is protected from damage caused by high-voltage switching operations or hot-swapping.

The specific data is subject to PDF, and the above content is for reference

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