NGTB60N65FL2WG Allicdata Electronics

NGTB60N65FL2WG Discrete Semiconductor Products

Allicdata Part #:

NGTB60N65FL2WGOS-ND

Manufacturer Part#:

NGTB60N65FL2WG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: 650V/60A IGBT FSII
More Detail: IGBT Field Stop 650V 100A 595W Through Hole TO-247...
DataSheet: NGTB60N65FL2WG datasheetNGTB60N65FL2WG Datasheet/PDF
Quantity: 121
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 121Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 100A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Power - Max: 595W
Switching Energy: 1.59mJ (on), 660µJ (off)
Input Type: Standard
Gate Charge: 318nC
Td (on/off) @ 25°C: 117ns/265ns
Test Condition: 400V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr): 96ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Description

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NGTB60N65FL2WG transistors fall into the category of Insulated Gate Bipolar Transistors (IGBTs) that have a single function. This review will provide a brief overview of the application field and working principle of this necessary component of modern electronics.

These IGBTs are based on the well-known semiconductor device called a power transistor. They are ideally suited for the use in power electronic applications such as motor drives and power supplies. Because of their low on-state voltage drop and low reverse recovery current, these transistors are ideal for use in many applications.

The main application field for these transistors is in the area of power conversion and switching. They can be used for applications such as motor control, power supplies, and power switching. Additionally, they can be used for various amplifier applications. In the area of power switching, NGTB60N65FL2WG transistors can be used for high frequency power circuits. They are often used in applications such as switching frequency converters and phase control converters.

The main working principle of these transistors is based on the fact that they have two junctions, which are separated by an insulated gate. This gate allows current to flow between the two junctions. When the gate is activated, current flows through the device, creating a voltage drop across both junctions. This allows for power conversion and switching to be accomplished.

The gate of these transistors is controlled by applying a voltage across the gate. When it is activated, the gate voltage allows current to flow, creating a voltage drop across both the junctions of the transistor. This effect can be used to control the power applied to a circuit, as well as to switch power on and off at specific times.

The working principle of these transistors also makes them ideal for use in various amplifier applications. When used in an amplifier, the voltage drop across the two junctions allows for a much higher gain than traditional transistor solutions. This gain is then used to amplify a signal or to create a larger output power than can be achieved with traditional transistor solutions.

Overall, NGTB60N65FL2WG transistors are ideal for use in various applications in the realm of power conversion and switching. They have a very low on-state voltage drop and low reverse recovery current, making them ideal for many applications. Furthermore, they have an insulated gate that can be controlled with a voltage, allowing them to be used in amplifier applications as well.

The specific data is subject to PDF, and the above content is for reference

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