NGTB20N120IHWG Allicdata Electronics
Allicdata Part #:

NGTB20N120IHWGOS-ND

Manufacturer Part#:

NGTB20N120IHWG

Price: $ 3.20
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 20A 1200V TO-247
More Detail: IGBT Trench Field Stop 1200V 40A 341W Through Hole...
DataSheet: NGTB20N120IHWG datasheetNGTB20N120IHWG Datasheet/PDF
Quantity: 120
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 3.20000
10 +: $ 3.10400
100 +: $ 3.04000
1000 +: $ 2.97600
10000 +: $ 2.88000
Stock 120Can Ship Immediately
$ 3.2
Specifications
Power - Max: 341W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/170ns
Gate Charge: 150nC
Input Type: Standard
Switching Energy: 480µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
Current - Collector Pulsed (Icm): 80A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs (Insulated Gate Bipolar Transistors) belong to a family of power electronics devices, which are different from traditional MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) due to their ability to control larger voltages and currents. The NGBT20N120IHWG device belongs to the single type IGBTs, which is used in a wide range of applications such as motor control, switch mode power supplies, uninterruptible power supplies, solar inverters, etc.

The basic operating principle of an IGBT involves a PN junction substrate, doped layer, and gate connected to bias the substrate. When a voltage is applied to the gate, a positive bias is applied to the substrate, making it act as a switch, to allow current to flow.

The NGBT20N120IHWG is an N-channel IGBT with a 1200V blocking voltage, 2000A peak collector current, 2.3mΩ on-state resistance and a 45A maximum gate current rating. It is designed for applications where very fast switching is needed, in order to eliminate unwanted switching noises. It is also able to operate at high temperatures, thereby reducing circuit complexity without compromising on performance.

The NGBT20N120IHWG is mainly used in motor control applications, where it can be used to implement fast, accurate, and reliable switching between different power stages. It is also used in switching power supplies, as it can provide efficient and cost-effective control over the output power. The device is also used in uninterruptible power supplies in order to increase reliability and reduce downtime, while providing power to critical equipment.

In solar inverter applications, the IGBT can be used to controllably switch the power level, allowing for more efficient operation. This is beneficial as it allows maximum energy usage, as well as reducing any losses due to non-uniform power levels. It can also be used to support other devices in order to ensure uninterrupted operation, by providing stable voltage and current levels.

The NGBT20N120IHWG is a versatile and ideal device for applications requiring a high degree of accuracy and switching speed. It is suitable for applications in the automotive, industrial and consumer electronics markets, due to its high breakdown voltage and low gate current rating. The device is reliable and able to operate at high temperatures, making it well suited for applications used in harsh environments.

The specific data is subject to PDF, and the above content is for reference

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