Allicdata Part #: | NGTB30N120L2WGOS-ND |
Manufacturer Part#: |
NGTB30N120L2WG |
Price: | $ 7.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 60A 534W TO247 |
More Detail: | IGBT Trench Field Stop 1200V 60A 534W Through Hole... |
DataSheet: | NGTB30N120L2WG Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 6.37560 |
10 +: | $ 5.73804 |
100 +: | $ 4.71794 |
500 +: | $ 3.95287 |
Power - Max: | 534W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 450ns |
Test Condition: | 600V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 116ns/285ns |
Gate Charge: | 310nC |
Input Type: | Standard |
Switching Energy: | 4.4mJ (on), 1.4mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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Insulated-gate bipolar transistors (IGBTs) are current-controlled bidirectional semiconductor switches that allow for fast, efficient and low-loss switching of electrical current. The NGTB30N120L2WG is a type of IGBT specifically designed for medium-power applications. In this article, we\'ll provide a brief overview of the NGTB30N120L2WG\'s application field and working principle.
Application Field
The NGTB30N120L2WG IGBT is typically used in medium-power applications, especially industrial automation applications like motor control, power factor correction, lighting and HVAC (heating, ventilation and air conditioning) systems. Its main features include:
- 30A source current
- 120V VCE (Collector-Emitter voltage)
- 2 package option
- WG (Wide-Gap) technology
The NGTB30N120L2WG\'s small footprint, low cost and low thermal impedances make it particularly suitable for use in industrial automation applications.
Working Principle
Like most IGBTs, the NGTB30N120L2WG IGBT consists of a paralleled N-type MOSFET and PNP-type bipolar transistor. The N-type MOSFET is used as the high-speed switching element and the PNP-type bipolar transistor is used as the static protection device. When the gate is driven with an electric current, the junction between the N-type MOSFET and p-type MOSFET becomes conductive, allowing for current to flow from the collector to the emitter. When the gate is no longer driven, the junction between the N-type MOSFET and p-type MOSFET becomes non-conductive, shutting off the current.
The NGTB30N120L2WG IGBT utilizes WG (Wide-Gap) technology, which is a process that creates a thicker layer of SiO2 insulation, allowing for increased voltage capability and improved abrasion resistance. This makes it particularly suited for medium-power applications.
Conclusion
The NGTB30N120L2WG IGBT is a type of IGBT specifically designed for medium-power applications. It offers a smaller footprint, low cost and improved thermal impedances. The NGTB30N120L2WG utilizes WG (Wide-Gap) technology, which increases its voltage capability and improves abrasion resistance. This makes the NGTB30N120L2WG particularly suitable for use in industrial automation applications like motor control, PFC, lighting and HVAC systems.
The specific data is subject to PDF, and the above content is for reference
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