NGTB15N120FLWG Discrete Semiconductor Products

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In this article, we will discuss the application field and working principle of the NGTB15N120FLWG IGBT (Insulated Gate Bipolar transistor). This single IGBT is manufactured by Infineon using state-of-the-art processes which enable low conduction losses, fast switching times, high blocking voltage and high temperature operation up to 125°C. This device is suitable for medium power automotive and industrial applications.

Application Field

The NGTB15N120FLWG is a single IGBT transitor that can be used in many different applications. It can be used as a switch, in motor control, as a linear amplifier or in AC to DC power conversion. In motor control applications, it is used for motor drive and control, providing high-efficiency operation with minimal loss. It is also used for DC to AC power conversion, where it is used to switch current and voltage for powering AC appliances. Furthermore, in home and industrial applications, the NGTB15N120FLWG can be used in AC to DC power conversion, allowing for the efficient transmission of energy.

Working Principle

An Insulated Gate Bipolar Transistor (IGBT) is a power electronic semiconductor device which combines the characteristics of a MOSFET and a BJT, providing high-speed switching as well as high voltage and current capability. IGBTs are predominantly used in power electronic applications and can switch high currents and voltages up to several kilowatts in some applications.

The NGTB15N120FLWG IGBT is a single IGBT with a working voltage of 1200V, a maximum on-state current of 15A and a maximum on-state voltage drop of 1.2V at 25°C.

The internal structure of an IGBT consists of a P-N junction between two MOSFETs, with one MOSFET acting as the collector and the other acting as the base. The MOSFETs are insulated from one another with a layer of insulation, which provides the “gate”. When a voltage is applied to the gate, a current is allowed to flow between the collector and base, turning the device on. The collector to emitter current flow is proportional to the gate voltage, allowing the IGBT to be used in linear applications as well.

When the voltage across the collector and emitter is reversed, the MOSFETs are effectively disconnected, causing the IGBT to turn off. This reverse-biased, insulated gate provides effective isolation between the collector and emitter, which allows the IGBT to switch quickly without the formation of electric sparks.

The NGTB15N120FLWG is designed to operate at temperatures up to 125°C and has thermally enhanced packaging for improved thermal dissipation, allowing for greater power handling capabilities.

In summary, the NGTB15N120FLWG is a single IGBT which is suitable for automotive and industrial use in medium power applications. This device provides low conduction losses, fast switching times, high blocking voltage and high temperature operation. Its applications include motor control, AC/DC power converters, and linear power amplifiers.

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