NGTB40N120S3WG

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	160A
Current - Collector Pulsed (Icm):	160A
Vce(on) (Max) @ Vge, Ic:	1.95V @ 15V, 40A
Power - Max:	454W
Switching Energy:	2.2mJ (on), 1.1mJ (off)
Input Type:	Standard
Gate Charge:	212nC
Td (on/off) @ 25°C:	12ns/145ns
Test Condition:	600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr):	163ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

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Introduction

IGBT (Insulated-Gate Bipolar Transistors) are semiconductor devices that combine features from both bipolar and field effect transistors, hence the name. IGBTs have been used in many different types of applications, ranging from simple switch power supplies to high power motor control applications, among others. NGTB40N120S3WG is a specific IGBT model belonging in the category of single IGBTs, which means that a single IGBT is included in the package. In the next sections, the application field and working principle of the NGTB40N120S3WG will be examined in more detail.

Application Field

The NGTB40N120S3WG is a N-channel IGBT which means that it is a unipolar device and most of its current will flow through the N-type base and emitter regions. This makes it a suitable choice for applications that require unipolar operation, with few exceptions. Due to the structure of the NGTB40N120S3WG and the special materials used in its construction, it is capable of carrying high currents at a lower switching frequency than most other types of IGBTs. Thus, the NGTB40N120S3WG is often used in high power switching applications, such as AC motor drives, uninterruptible power supplies (UPSs) and HVAC systems, among others. Additionally, it is also used in applications that require low power dissipation and low capacitance, such as mobile phones and digital switching amplifiers.

Working Principle

The NGTB40N120S3WG is a three-terminal device, meaning that it has an emitter, a collector and a gate terminal. It works by exploiting the electron movement through an electric field, which makes it a unipolar device. When the gate terminal is left open, the NGTB40N120S3WG will remain in its OFF state, meaning that there is no current flowing through the collector and the emitter. When a positive voltage is applied to the gate terminal, the electric field that forms between the N-type materials inside the transistor will cause electron movement. This will cause the NGTB40N120S3WG to be switched to its ON state, allowing current to flow through its collector and the emitter. When the S3WG is switched to its ON state, its collector-emitter voltage (Vce_sat) drops significantly, resulting in low losses. It also has a low on-state gate charge (Qg) which helps reduce switching losses.

Conclusion

The NGTB40N120S3WG is a single IGBT from the N-channel family. It is a popular choice for applications that require unipolar operation, such as AC motor drives, uninterruptible power supplies (UPSs) and HVAC systems, among others. The NGTB40N120S3WG works by exploiting the movement of electrons within an electric field, allowing it to be switched between its ON and OFF states. It also has features such as low collector-emitter voltage (Vce_sat) and low on-state gate charge (Qg) which help reduce losses. Thus, the NGTB40N120S3WG is often used in high power switching applications.

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