NGTB50N65S1WG

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	140A
Current - Collector Pulsed (Icm):	140A
Vce(on) (Max) @ Vge, Ic:	2.45V @ 15V, 50A
Power - Max:	300W
Switching Energy:	1.25mJ (on), 530µJ (off)
Input Type:	Standard
Gate Charge:	128nC
Td (on/off) @ 25°C:	75ns/128ns
Test Condition:	400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr):	70ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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What is NGTB50N65S1WG and What is its Application Field?

NGTB50N65S1WG transistor is a type of insulated gate bipolar transistor (IGBT). It is a power semiconductor device that operates as an electronic switch by using the positive and negative voltage of the applied voltage to control the current flow. It is designed for power control and other power applications such as motor control and for power conversion applications.

Features of NGTB50N65S1WG

NGTB50N65S1WG has many features that make it an ideal choice for power control applications. It has a forward voltage drop of 650V, current rating of 50A, a maximum junction temperature of 150°C, and a low on-state resistance (RDS(on)). It also has a high commutation speed and is capable of zero-voltage switching (ZVS).

Uses of NGTB50N65S1WG

NGTB50N65S1WG is mainly used for power control and power supply applications such as motor control, power conversion, switch-mode power supplies, and inverters. It is also used in various power control and driver circuits and can be used to drive high power loads such as motors and solenoids.

Working Principle of NGTB50N65S1WG

The working principle of NGTB50N65S1WG is simple. It operates using the positive and negative voltage of the applied voltage to control the current flow. When the gate voltage is applied, a depletion region is created. The applied voltage is then used to draw current through the IGBT. This current can then be regulated by altering the gate voltage. The IGBT is turned off when the gate voltage is below the holding voltage. It can also be turned off instantly by reverse biasing the device.

Advantages of NGTB50N65S1WG

The main advantages of the NGTB50N65S1WG are its high commutation speed and its low switching losses. It also has a high switching frequency, which is useful for applications such as motor control. The low on-state resistance (RDS(on)) also helps minimize power loss. Additionally, the NGTB50N65S1WG has a thermal protection to prevent any excess temperature from damaging the device.

Conclusion

In conclusion, the NGTB50N65S1WG is an ideal choice for power control applications due to its high commutation speed and low switching losses. It is perfect for controlling high power loads such as motors and solenoids and can also be used in various power control and driver circuits. Additionally, its thermal protection helps protect the device from large temperature changes.

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