NGTB50N60L2WG Discrete Semiconductor Products

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IGBTs are a type of transistor used often in high voltage applications that require high switching speeds with excellent reliability. They have the same structure as a MOSFET (metal oxide semiconductor field-effect transistor), but with two transistors instead of one, providing a higher switching speed with lower losses. The NGTB50N60L2WG IGBT is a high power, low voltage feature-packed device made for applications in both low voltage and high voltage systems.

The NGTB50N60L2WG offers higher gate drive capability, which reduces drive losses. Ultra-low gate charge and effectively low switching losses combined make for a higher efficiency IGBT. The NGTB50N60L2WG also has a wide operating temperature range, which ensures reliable operation in temperatures where other devices may not function correctly.

Application Field

The NGTB50N60L2WG is an ideal device for a variety of applications. Its low gate charge and high temperature range make it perfect for use in motors, generators, frequency converters and even in power rail systems. It is also perfectly suited for applications in automotive, industrial automation and even aerospace applications.

Automotive applications that require long lifetimes and can withstand high temperatures like engine control, body control and braking systems make good use of the NGTB50N60L2WG. Its high-temperature range also allows it to be used in industrial automation systems for high voltage power supplies and for AC/DC converters, such as variable speed drives. It is a particularly reliable device for high-power, high-voltage applications.

Working Principle

The NGTB50N60L2WG operates similarly to a traditional MOSFET, but with an extra control transistor to reduce switching speed losses. Instead of a single gate, the NGTB50N60L2WG has two gates, each one with its own control transistor. The first gate produces the voltage required to open and close the transistor, while the second one controls the current. Both the gate transistors work together in order to increase the device’s switching speed and reduce losses.

When the voltage applied to the gate(s) is too low, the IGBT is OFF, meaning that no conduction takes place. When the voltage is high enough, the gate transistors turn on both transistors within the device and the IGBT is ON, allowing current to flow between the collector and emitter. When the applied voltage returns to zero, both the first and second transistors will turn off and the IGBT will revert to its OFF state.

The NGTB50N60L2WG employs a similar use of a dual gate system as other IGBTs, but is designed with a number of other features that make it perfect for high voltage, high power applications. Its low gate charge, high temperature range and low switching losses make it an ideal choice for any high power system that requires strong reliability in extreme temperatures. It is an excellent device for any system that needs a powerful, reliable and energy-efficient IGBT.

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