Allicdata Part #: | NGTB25N120FLWGOS-ND |
Manufacturer Part#: |
NGTB25N120FLWG |
Price: | $ 3.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 25A TO247-3 |
More Detail: | IGBT Trench Field Stop 1200V 50A 192W Through Hole... |
DataSheet: | NGTB25N120FLWG Datasheet/PDF |
Quantity: | 64 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 3.18780 |
10 +: | $ 2.86524 |
100 +: | $ 2.34769 |
500 +: | $ 1.99852 |
1000 +: | $ 1.68550 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 50A |
Current - Collector Pulsed (Icm): | 200A |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 25A |
Power - Max: | 192W |
Switching Energy: | 1.5mJ (on), 950µJ (off) |
Input Type: | Standard |
Gate Charge: | 220nC |
Td (on/off) @ 25°C: | 91ns/228ns |
Test Condition: | 600V, 25A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 240ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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Application Field and Working Principle of NGTB25N120FLWG
The NGTB25N120FLWG, or the NGTB25N120FLWG IGBT, belongs to the category of single IGBT transistors and is used in a variety of fields, such as power electronics, renewable energy, and automotive power systems. This IGBT is a 25A device with an advanced trench construction, which helps to reduce overall power losses and improve efficiency, allowing higher electrical power densities. Additionally, the NGTB25N120FLWG offers excellent temperature and dynamic performance, improved short circuit ruggedness, and gate driver compatibility.
Description of NGTB25N120FLWG IGBT
The NGTB25N120FLWG is a 25A transistor with a breakdown voltage of 1200V and a collector-emitter voltage of 1200V. It has ultra-low gate charge of 11nC. It also has an acceptable operating temperature of -55°C to 150°C. The fast switching speeds of these transistors make them suitable for switching applications. This transistor also has a very low Ice(on) ( collector-emitter saturation voltage ) of 4V and an Ic( Collector Current) of 25A.
Working Principle of NGTB25N120FLWG IGBT
The working principle of the NGTB25N120FLWG IGBT is based on the flow of electrons or holes in a semiconductor. The IGBT is a three terminal device made up of a source, a gate and a drain. When a voltage is applied to the gate, it causes a current to flow between the source and the drain. This current is known as the gate current. The gate current controls the flow of the collector current. If the gate current is increased, the collector current increases and if the gate current is decreased, the collector current decreases. The IGBT is used to provide efficient switching of a load that is driven by an AC signal.
The NGTB25N120FLWG IGBT has a high input impedance and a low output impedance, making it suitable for high power applications. Additionally, this type of IGBT has a faster switching speed than other types of IGBTs. This is because it has a higher gate capacitance, which allows for faster charging and discharging.
Applications of NGTB25N120FLWG IGBT
The NGTB25N120FLWG IGBT has a wide range of applications. It is used in a variety of power electronic circuits and is especially suitable for high power applications such as motor drives and power factor correction. It is also used in power supplies, in power inverters, and for solar panel connection systems. Other applications include the use of NGTB25N120FLWG IGBTs for high power switching applications in automotive, industrial, and medical systems.
Conclusion
The NGTB25N120FLWG IGBT is a 25A device with an advanced trench construction and excellent temperature and dynamic performance. Its fast switching speeds make it suitable for high power applications such as motor drives and power factor correction. This IGBT is also used in a variety of power electronic circuits, power supplies, power inverters, and solar panel connection systems.
The specific data is subject to PDF, and the above content is for reference
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