Allicdata Part #: | NGTB35N65FL2WGOS-ND |
Manufacturer Part#: |
NGTB35N65FL2WG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 70A 300W TO247 |
More Detail: | IGBT Trench Field Stop 650V 70A 300W Through Hole ... |
DataSheet: | NGTB35N65FL2WG Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 300W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 68ns |
Test Condition: | 400V, 35A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 72ns/132ns |
Gate Charge: | 125nC |
Input Type: | Standard |
Switching Energy: | 840µJ (on), 280µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 35A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The NGTB35N65FL2G is a type of transistor and specifically, an Insulated Gate Bipolar Transistor (IGBT). The IGBT is a semiconductor device that is a combination of a bipolar junction transistor and a MOSFET, creating a component that can switch high current and voltages at high speeds. IGBTs have been increasingly used in an array of applications and have become the widespread choice of transistors stands in the market.
The NGTB35N65FL2G is classified as a single IGBT. It has an average on-state voltage drop of 4.2 V and an on-state current of 135 A. It has a maximum positive gate-emitter voltage (VGE) of 20V and a maximum reverse diode voltage of 6V. In terms of its package, it has a press-pack package with a 0.9mm pin pitch and a maximum junction temperature of 175 degrees Celsius.
The primary application field of the NGTB35N65FL2G is mainly for automotive applications and industrial motor drives. It is also useful for consumer power supplies and uninterruptible power supplies (UPS). Some of the main applications of the NGTB35N65FL2G single IGBT includes motor control, welding equipment, power converters, power modules, and more.
When it comes to the working principle of NGTB35N65FL2G, this single IGBT utilizes voltage to control current. As voltage is applied to its gate terminal, the IGBT transistor is turned on and current can pass through the terminals between the collector and emitter. As the amount of voltage is increased at the gate terminal, more current is allowed to flow through the transistor. When the voltage at the gate terminal is removed, the transistor is then turned off, stopping the current.
The working of IGBT is also dependent on other variables such as temperature, voltage and gate current. As the temperature increases, it affects the on-state resistance of the IGBT and may cause fluctuations in the applied current. Similarly, the applied gate current alters the electrical characteristics of the IGBT and thus, can affect the current that is being passed through it.
Overall, the NGTB35N65FL2G single IGBT transistor is suitable for a variety of applications such as motor control, welding equipment, power converters, power modules, and more. With its ability to handle high currents and voltages at high speeds, it can be used in a range of consumer, automotive, industrial and consumer power supplies. With its ability to control current by voltage, it is a popular choice in the market.
The specific data is subject to PDF, and the above content is for reference
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