NGTB15N120IHWG Allicdata Electronics

NGTB15N120IHWG Discrete Semiconductor Products

Allicdata Part #:

NGTB15N120IHWGOS-ND

Manufacturer Part#:

NGTB15N120IHWG

Price: $ 2.31
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 15A 1200V TO-247
More Detail: IGBT Trench Field Stop 1200V 30A 278W Through Hole...
DataSheet: NGTB15N120IHWG datasheetNGTB15N120IHWG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.10420
10 +: $ 1.88937
100 +: $ 1.54791
500 +: $ 1.31771
1000 +: $ 1.11132
Stock 1000Can Ship Immediately
$ 2.31
Specifications
Power - Max: 278W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 15A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/130ns
Gate Charge: 120nC
Input Type: Standard
Switching Energy: 360µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NGTB15N120IHWG is a single component Insulated Gate Bipolar Transistor (IGBT). It belongs to the category of Transistors - IGBTs - Single.

The NGTB15N120IHWG is useful in applications where low-voltage, high-power and high-temperature control are required. This component is designed to replace larger, less efficient components in power electronic applications.

The main feature of this device is its ability to efficiently switch and control large loads. The NGTB15N120IHWG has a significant gain advantage over other IGBTs, offering a high level of performance in high-power applications.

The NGTB15N120IHWG uses a silicon base and N-channel MOSFETs to form a simple two-transistor arrangement. In this arrangement, the gate of the first transistor is connected to the drain of the second transistor. The gate of the second transistor is then connected to the source of the first transistor, forming a self-latching circuit.

When a positive voltage is applied to the gate of the first transistor, it will conduct current between its drain and source, creating a low-resistance channel. This channel will then displace the charge held by the second transistor and allow current to flow from the drain to the source of the first transistor. This forms an inverse-capacitance, low voltage, high-speed switching effect.

The control voltage for the first transistor is made adjustable by connecting an RC resistor circuit between the gate and source of the first transistor. This allows the conduction voltage to be adjusted to fit the needs of the application.

The second transistor is switched off by introducing a negative voltage to its gate. This causes its channel to increase in resistance, preventing current from flowing out its drain and back into the source of the first transistor. This effectively switches off the whole device.

Another advantage of the NGTB15N120IHWG is its ability to dissipate high voltage and large currents. This allows the device to be used in a variety of applications, such as solar power, industrial drives, aerospace and automotive applications.

Overall, the NGTB15N120IHWG is an excellent choice for applications where low-voltage, high-power and high-temperature control are required. It is a reliable and efficient device, which makes it ideal for many power electronic applications.

The specific data is subject to PDF, and the above content is for reference

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