NGTB20N120IHRWG Discrete Semiconductor Products |
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Allicdata Part #: | NGTB20N120IHRWGOS-ND |
Manufacturer Part#: |
NGTB20N120IHRWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 40A 384W TO247 |
More Detail: | IGBT Trench Field Stop 1200V 40A 384W Through Hole... |
DataSheet: | NGTB20N120IHRWG Datasheet/PDF |
Quantity: | 100 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 384W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 600V, 20A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | -/235ns |
Gate Charge: | 225nC |
Input Type: | Standard |
Switching Energy: | 450µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NGTB20N120IHRWG Transistor is a single IGBT (Insulated Gate Bipolar Transistor) device, which is a combination of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a bipolar junction transistor (BJT). Compared to other MOSFETs, IGBTs have higher current capacity and lower power losses, making them a good choice for high-power applications, notably power electronics and motor control.
In terms of applications, NGTB20N120IHRWG transistors are commonly used in applications such as motor control, induction heating, welding and solar inverters. The NGTB20N120IHRWG is a relatively high current device, rated at 8A of collector current and 13A of collector current at Tj = 25°C. It also has a frequency of operation between 200KHz to 1MHz.
The working principle of the NGTB20N120IHRWG is similar to that of other MOSFETs. An electrical gate signal is used to control the flow of current between the gate and the source. When the source terminal is more positive than the gate terminal, current flows from the source to the gate. When the gate is more positive than the source, the current is blocked. The voltage between the gate and source determines the level of conduction, and thus the amount of current that is allowed to flow. This makes it very efficient in controlling current to applications such as motor control and induction heating.
In terms of structure, the NGTB20N120IHRWG includes a collector, an emitter, a gate, and an insulated gate. The collector, emitter and gate terminals are located on the bottom of the device, while the insulated gate terminal is located on the top. The insulated gate terminal is insulated from the other terminals to prevent electrical current from crossing paths and damaging the device. This insulation also reduces any parasitic capacitance between the gate and the other terminals.
The ability of the device to control large currents and high voltages makes it a favorite choice for applications such as motor control, induction heating, welding and solar inverters. The NGTB20N120IHRWG also shares some of the same characteristics as other IGBTs, such as high switching speed, low leakage current, and extremely low power losses. This makes it a more efficient choice than other transistors, and it is also more cost-effective.
Overall, the NGTB20N120IHRWG is a great choice for high-power applications. The single-emitter IGBT is highly efficient, and can be used in many applications with excellent results. Its structure, working principle and applications make it an ideal choice for power electronics and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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NGTB50N60L2WG | ON Semicondu... | 5.15 $ | 1000 | IGBT 600V 50A TO247IGBT T... |
NGTB75N60FL2WG | ON Semicondu... | 6.07 $ | 1000 | IGBT 600V 75A TO247IGBT T... |
NGTB30N120FL2WG | ON Semicondu... | -- | 1000 | IGBT 1200V 60A 452W TO247... |
NGTB30N120L2WG | ON Semicondu... | 7.01 $ | 1000 | IGBT 1200V 60A 534W TO247... |
NGTB25N120IHLWG | ON Semicondu... | 2.12 $ | 1000 | IGBT 1200V 50A 192W TO247... |
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NGTB40N65IHL2WG | ON Semicondu... | -- | 336 | IGBT 650V 40A TO-247IGBT ... |
NGTB40N120IHRWG | ON Semicondu... | 3.61 $ | 233 | IGBT 1200V 80A 384W TO247... |
NGTB40N120SWG | ON Semicondu... | 4.85 $ | 177 | IGBT 40A 1200V TO-247IGBT... |
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NGTB25N120FLWG | ON Semicondu... | 3.51 $ | 64 | IGBT 1200V 25A TO247-3IGB... |
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NGTB50N65S1WG | ON Semicondu... | 2.37 $ | 240 | IGBT TRENCH 650V 140A TO2... |
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NGTB25N120FL3WG | ON Semicondu... | 3.4 $ | 415 | IGBT 1200V 100A TO247IGBT... |
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