NGTB50N60FWG Discrete Semiconductor Products |
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Allicdata Part #: | NGTB50N60FWGOS-ND |
Manufacturer Part#: |
NGTB50N60FWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 100A 223W TO247 |
More Detail: | IGBT Trench 600V 100A 223W Through Hole TO-247 |
DataSheet: | NGTB50N60FWG Datasheet/PDF |
Quantity: | 43 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 223W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 77ns |
Test Condition: | 400V, 50A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 117ns/285ns |
Gate Charge: | 310nC |
Input Type: | Standard |
Switching Energy: | 1.1mJ (on), 1.2mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 100A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An insulated gate bipolar transistor (IGBT) is a type of semiconductor device that combines both bipolar junction transistor (BJT) and metal oxide semiconductor field-effect transistor (MOSFET) technologies. The NGTB50N60FWG is an IGBT that is specifically designed for a variety of applications, such as motor control, power management, and power conversion. In this article, we will discuss the various characteristics and the working principle of the NGTB50N60FWG.
Characteristics of NGTB50N60FWG:
- It has a VCE(sat) rating of 5.0V.
- It is capable of passing a current of 50A.
- It has an avalanche energy rating of 250mJ.
- It is capable of operating at frequencies up to 200kHz.
- It has an on-state voltage drop of 0.7V.
The NGTB50N60FWG is suitable for a variety of applications, such as motor control, AC-DC and DC-DC power conversion, frequency control, and lighting control. The IGBT is particularly useful in motor control due to its integration of both bipolar and MOSFET technologies, making it capable of providing fast switching times and low on-state resistances as compared to other transistors. The IGBT also has low switching losses and low EMI, making it suitable for applications that require high performance.
In terms of its working principle, the NGTB50N60FWG features an IGBT with a built-in diode. It consists of two layers of conductive semiconductor material separated by an insulator. The first layer acts as an emitter, the second as a collector. When a voltage is applied to the gate, it causes a current to form between the emitter and collector, thus allowing the transistor to conduct. This type of transistor is ideal for switching applications as it is fast and reliable.
In conclusion, the NGTB50N60FWG is an IGBT that provides fast switching times and low on-state resistances. It is suitable for applications such as motor control, AC-DC and DC-DC power conversion, frequency control, and lighting control. Its working principle consists of two layers of conductive semiconductor material separated by an insulator, where a current is formed when a voltage is applied to the gate. This type of transistor makes for a reliable and fast switching device for various applications.
The specific data is subject to PDF, and the above content is for reference
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