NTD4865N-1G

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NTD4865N-1G Application Field and Working Principle

The NTD4865N-1G is a high-voltage high-current transistor from ON Semiconductor and is classified as a Single MOSFET. The NTD4865N-1G is a N-type MOSFET which utilizes both channels for ohmic contact along with a dedicated drain-source design. When operating, this MOSFET can handle voltage up to 65V and current up to 2 amps. This makes the NTD4865N-1G ideal for applications requiring large amounts of current and high-voltage. The enhanced characteristics of this MOSFET, such as higher on-state resistance, greater power dissipation, and better thermal stability, makes the NTD4865N-1G particularly suitable in applications that require a high level of power efficiency and durability.

The NTD4865N-1G is most commonly used in applications such as DC/DC power conversion, integrated power switches, alternating current (AC) output, and lighting control. This makes it an ideal choice for a range of different power conversion needs, such as automotive, battery management systems, and low-voltage power supplies. Additionally, the NTD4865N-1G can be used in latching circuits, high-efficency switching, and active harmonic filtering.

The NTD4865N-1G is a metal-oxide semiconductor field-effect transistor (MOSFET). Basically, MOSFETs are controlled by a gate voltage, and are suited for high-current and high-voltage applications. This is because of their high switching speed, which allows them to quickly turn on or off a current or voltage. The NTD4865N-1G utilizes an N-type MOSFET, which contains two channels, one for ohmic contact and one for the drain-source. By using two channels, the NTD4865N-1G becomes particularly suitable for a range of applications requiring large currents and high-voltage.

When the gate voltage of an N-type MOSFET is positive, electrons will be attracted toward the source. At the same time, the holes of the N-type MOSFET will be pushed away from the source. As this process continues, the current flow increases and the resistance decreases. This is the basic working principle of an N-type MOSFET. The NTD4865N-1G is a MOSFET specially optimized for high-current and high-voltage applications by utilizing two channels—one for ohmic contact and one for drain-source—which allows for greater efficiency and more effective heat dissipation.

In conclusion, the NTD4865N-1G is a Single MOSFET from ON Semiconductor that is designed to handle large currents and high-voltage while providing high levels of efficiency and reliability. This makes the NTD4865N-1G an ideal choice for DC/DC power conversion, integrated power switches, and other high-voltage applications.

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