| Allicdata Part #: | NTD4809NHT4GOSTR-ND |
| Manufacturer Part#: |
NTD4809NHT4G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 30V 9A DPAK |
| More Detail: | N-Channel 30V 9.6A (Ta), 58A (Tc) 1.3W (Ta), 52W (... |
| DataSheet: |  NTD4809NHT4G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.3W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2155pF @ 12V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
| Current - Continuous Drain (Id) @ 25°C: | 9.6A (Ta), 58A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The NTD4809NHT4G is a high voltage MOSFET that can be used in a range of single-transistor applications. It is a single-ended N-channel MOSFET that requires an input voltage of between 0 and 20V, and an output voltage of up to 35V.
The NTD4809NHT4G has a high breakdown voltage of 40V and a maximum output current of 1A. It is especially suitable for use in a range of high voltage switching applications and in AC or DC motor control and start-stop circuit. It is also well suited for use in high-frequency switching applications and for pulse width modulation (PWM) control.
The NTD4809NHT4G works by controlling the flow of electrons from a P-channel to an N-channel MOSFET. When the gate voltage is lower than the threshold voltage, electrons can flow from the P-channel to the N-channel and vice versa. When the gate voltage is higher than the threshold voltage, the electrons can no longer flow from the P-channel to the N-channel, and vice versa.
The NTD4809NHT4G is especially useful for applications that require high switching speed and low power consumption. It is also commonly used in high power audio and amplifier power supply applications. In addition, it can be used in DC-DC converters and AC-DC inverters.
The NTD4809NHT4G is a solid-state device that uses a MOSFET structure to convert electrical energy into mechanical energy. It works by applying a voltage (Vgs) to the gate of the MOSFET which controls the flow of electrons through the device. When a voltage is applied to the gate, the number of electrons that can travel from the P-channel to the N-channel will be limited. The voltage applied to the gate directly affects the channel current that can flow through the device.
The NTD4809NHT4G is a versatile device that can be used in a variety of different applications. It is well suited for use in audio output stages, DC-DC converters and AC-DC inverters. It is also well suited for use in high power audio and amplifier power supply applications. In addition, it can be used in PWM control circuits and high-frequency switching applications.
In summary, the NTD4809NHT4G is a high voltage MOSFET that can be used in a wide range of single-transistor applications. It is especially suited for use in high voltage switching applications, audio output stages, high-frequency switching and PWM control circuits. It can also be used in DC-DC converters and AC-DC inverters.
The specific data is subject to PDF, and the above content is for reference
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