Allicdata Part #: | NTD4860NA-1G-ND |
Manufacturer Part#: |
NTD4860NA-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 65A IPAK |
More Detail: | N-Channel 25V 10.4A (Ta), 65A (Tc) 1.28W (Ta), 50W... |
DataSheet: | NTD4860NA-1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.28W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1308pF @ 12V |
Gate Charge (Qg) (Max) @ Vgs: | 21.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 30A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.4A (Ta), 65A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD4860NA-1G is a kind of single Mosfet device with maximum drain current of 9A which can be used as a logic-level type. It has low drain source on-resistance and external gate source voltage lower than 2.5V in the 10V operating range. It can also be used as a switch or amplifier in digital circuits.
The main application field of NTD4860NA-1G includes, but not limited to, power management, MOSFET, motor drive, DC/DC, audio, automotive and advanced lighting control. It is suitable for general purpose power MOSFET applications in switching power supply, electronic motor control, and other field of application where high current and low on-resistance is needed. It can be used in power stages of switching power supply, where it function as ON/OFF switch. It can also be used in class-D and other audio applications, DC/DC power converters, and various motor drive applications.
The working principle of NTD4860NA-1G is using the directional-controlled property of p-type materials to control current between the source and drain with the gate voltage. It is also known as insulated-gate field-effect transistor(IGFET), because it consists of a gate with an insulating layer between the gate and channel of the device. Once the gate voltage is applied, the source-to-drain current can be controlled. The lower the gate-source voltage is, the higher the current flowing from source to drain will be. In other words, when the gate-source voltage becomes higher than a certain threshold, it can modulate the current to achieve the purpose of amplifying signals.
In conclusion, NTD4860NA-1G is a logic-level type single Mosfet device with maximum drain current of 9A, which has low drain source on-resistance and external gate source voltage lower than 2.5V in the 10V operating range. It can be used for power management, MOSFET, motor drive, DC/DC, audio, automotive and advanced lighting control. Its working principle is using the directional-controlled property of p-type materials to control current between the source and drain with the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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