Allicdata Part #: | NTD4806N-1G-ND |
Manufacturer Part#: |
NTD4806N-1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 11A IPAK |
More Detail: | N-Channel 30V 11.3A (Ta), 79A (Tc) 1.4W (Ta), 68W ... |
DataSheet: | NTD4806N-1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.4W (Ta), 68W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2142pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 11.5V |
Current - Continuous Drain (Id) @ 25°C: | 11.3A (Ta), 79A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTD4806N-1G is a single-channel, low-voltage, high-current, high-efficiency power MOSFET. It is a commonly used component within the field of automotive electronics, computer power supplies and other device-level power management applications. Its main categories of use include switching, amplifying and controlling of electric current and voltage. This article examines the application field and working principle of the NTD4806N-1G, a high quality component produced by ON Semiconductor Corporation.
Application Field
The NTD4806N-1G is a versatile component designed to reduce power consumption, improve efficiency and optimize power delivery in a wide array of devices and applications. Its main uses include automotive devices, such as power windows, headlights, antennas, seat heating systems and power steering controls; power supplies in computers and other electronic equipment; and motor controls, including robot steering and acceleration. Additionally, it has found applications in field-effect transistors, generators and electric bicycles.
Working Principle
The NTD4806N-1G is a power MOSFET, or metal-oxide-semiconductor field-effect transistor. These are specialized transistors that make use of oxide layers to control the flow of electrons through a semiconductor. The oxide layers act as a physical barrier, acting as a gate between two terminals – the source and drain – in order to facilitate the transfer of electric current between them. The gate is also connected to a control terminal, where a voltage can be applied to regulate the electrical current within the semiconductor.
The NTD4806N-1G has a low operating voltage of 16V and can deliver an impressive maximum current of 5A. This means that it is capable of running at a comparatively low voltage level, reducing the power demands on the system while improving efficiency. Additionally, it has a fast response time and a low on-resistance of 40μΩ, enabling it to switch and transfer high currents much faster than conventional transistors.
Conclusion
The NTD4806N-1G is a single-channel, low-voltage, high-current, high-efficiency power MOSFET that is used in a variety of automotive, computer and motor control applications. Its operational capabilities include a low operating voltage of 16V and a maximum current of 5A, as well as a fast response time and a low on-resistance of 40μΩ. As such, it is an ideal component for device-level power management solutions that require high efficiency, low power consumption and quick, reliable performance.
The specific data is subject to PDF, and the above content is for reference
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